Related papers: Reversible long-range domain wall motion in an imp…
We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…
By using broadband linear and nonlinear dielectric spectroscopy we studied the magnetoelectric dynamics in the chiral antiferromagnet MnWO4. In the multiferroic phase the dielectric response is dominated by the dynamics of domains and…
The control of ferroelectric domain walls and their dynamics on the nanoscale becomes increasingly important for advanced nanoelectronics and novel computing schemes. One common approach to tackle this challenge is the pinning of walls by…
We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO3) can be speedily reversed by electric field pulsing, and the sign of the magnetic exchange bias can switch and recover…
Directed motion of domain walls (DWs) in a classical biaxial ferromagnet placed under the influence of periodic unbiased external magnetic fields is investigated. Using the symmetry approach developed in this article the necessary…
Sliding ferroelectricity in bilayer van der Waals materials exhibits ultrafast switching speed and fatigue resistance during the polarization switching, offering an avenue for the design of memories and neuromorphic devices. The unique…
In this report we demonstrate a simple model for the motion of a vortex domain wall in a ferromagnetic strip of submicron width under the influence of an external magnetic field. The model exhibits three distinct dynamical regimes. In a…
We theoretically study the antiferromagnetic domain wall motion actuated by an inhomogeneous external magnetic field. The Lagrangian and the equations of motion of antiferromagnetic spins under an inhomogeneous magnetic field are derived,…
Efficient electrical manipulation of domain walls is key to developing magnetic devices with fast switching capabilities and low energy consumption. Here we demonstrate Bloch-type domain wall velocities exceeding 1 km s$^{-1}$ in the…
We report the dielectric dispersion of the giant magnetocapacitance (GMC) in multiferroic DyMnO$_{3}$ over a wide frequency range. The GMC is found to be attributable not to the softened electromagnon but to the electric-field-driven motion…
We address the dynamics of magnetic domain walls in ferromagnetic nanowires under the influence of external time-dependent magnetic fields. We report a new exact spatiotemporal solution of the Landau-Lifshitz-Gilbert equation for the case…
We report the nanoscale electrical imaging results in hexagonal $Lu_{0.6}Sc_{0.4}FeO_3$ single crystals using conductive atomic force microscopy (C-AFM) and scanning microwave impedance microscopy (MIM). While the dc and ac response of the…
Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge…
Domain walls in soft permalloy strips may exhibit various equilibrium micromagnetic structures depending on the width and thickness of the strip, ranging from the well-known transverse and vortex walls in narrow and thin strips to double…
HfO$_{2}$-based ferroelectric thin films are promising for their application in ferroelectric devices. Predicting the ultimate magnitude of polarization and understanding its switching mechanism are critical to realize the optimal…
Vertical ferroelectricity where a net dipole moment appears as a result of in-plane ionic displacements has gained enormous attention following its discovery in transition metal dichalcogenides. Based on first-principles calculations, we…
The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic…
Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with…
Wurtzite ferroelectrics such as scandium-doped aluminum nitride (AlScN) are promising for next-generation memory because of their compatibility with semiconductor processes and strong spontaneous polarization. Ferroelectric switching in…
Magnetic domain walls function as a wave guide for low energy magnons. In this paper we develop the theory for the non-local transport of these bound magnons through a ferromagnetic insulator that are injected and detected electrically in…