Related papers: Reversible long-range domain wall motion in an imp…
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr$_2$O$_3$ is used in the estimates of the materials parameters. It is found that the domain…
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…
Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding…
The motion of a N\'eel-like ${180}^{\circ}$ domain wall induced by a time-dependent staggered spin-orbit field in the layered collinear antiferromagnet Mn$_2$Au is explored. Through an effective version of the two sublattice nonlinear…
Materials with long-range order like ferromagnetism or ferroelectricity exhibit uniform, yet differently oriented three-dimensional regions called domains that are separated by two-dimensional topological defects termed domain…
We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO$_3$. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO$_3$…
The dynamic observation of domain wall motion induced by electric field in magnetoelectric iron garnet film is reported. Measurements in 800 kV/cm electric field pulses gave the domain wall velocity ~45 m/s. Similar velocity was achieved in…
We theoretically study a ferrimagnetic domain-wall motion driven by a rotating magnetic field. We find that, depending on the magnitude and the frequency of the rotating field, the dynamics of a ferrimagnetic domain wall can be classified…
A domain wall in a ferromagnetic one-dimensional nanowire experiences current induced motion due to its coupling with the conduction electrons. When the current is not sufficient to drive the domain wall through the wire, or it is confined…
Although enhanced conductivity at ferroelectric domain boundaries has been found in BiFeO$_3$ films, Pb(Zr,Ti)O$_3$ films, and hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under…
The manipulation of mesoscale domain wall phenomena has emerged as a powerful strategy for designing ferroelectric responses in functional devices, but its full potential has not yet been realized in the field of magnetism. We show that…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
We deduce the intrinsic conductivity properties of the ferroelectric domain walls around the topologically protected domain vortex cores in multiferroic YMnO3. This is achieved by performing a careful equivalent-circuit analysis of…
Ferroic materials are well known to exhibit heterogeneity in the form of domain walls. Understanding the properties of these boundaries is crucial for controlling functionality with external stimuli and for realizing their potential for…
Understanding and manipulating nanoscale domain wall (DW) dynamics is a central topic in magnetism and spintronics for its promising applications in logic and memory devices. In most magnetic systems, inertia affects only transient DW…
Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can…
Sliding ferroelectrics constructed from stacked nonpolar monolayers enable out-of-plane polarization in two dimensions with exceptional properties, including ultrafast switching speeds and fatigue-free behavior. However, the widely accepted…
Searching for new methods controlling antiferromagnetic (AFM) domain wall is one of the most important issues for AFM spintronic device operation. In this work, we study theoretically the domain wall motion of an AFM nanowire, driven by the…
Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism,…
We investigate the nonlinear response of the domain wall velocity ($v$) to an external electric field ($E_{ext}$) in ferroelectric Si-doped HfO$_{2}$ thin film capacitors using piezoresponse force microscopy (PFM) and switching current…