Related papers: Mid-infrared group-IV nanowire laser
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet,…
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have…
The development of versatile and novel material platforms for integrated photonics is of prime importance in the perspective of future applications of photonic integrated circuits for quantum information and sensing. Here we present a…
Broadband mid-infrared (mid-IR) spectroscopy applications could greatly benefit from today's well-developed, highly scalable silicon photonics technology; however, this platform lacks broadband transparency due to its reliance on absorptive…
Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of…
Epsilon-near-zero (ENZ) materials, defined by $ | Re({\epsilon}) | < 1$, enable unique light propagation characteristics, including confinement within sub-wavelength regions. To reduce losses in this regime, materials with both near-zero…
Infrared laser systems are vital for applications in spectroscopy, communications, and biomedical devices, where infrared nonlinear optical (NLO) crystals are required for broadband frequency down-conversion. Such crystals need to have high…
Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number of Si3N4 integrated photonics platform applications is constantly growing including the…
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a…
Hexagonal-diamond (2H) group IV nanowires are key for advancing group IV-based lasers, quantum electronics, and photonics. Understanding their dielectric response is crucial for performance optimization, but their optical absorption…
We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it…
Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use…
This paper reports on the quasi-three-level continuous wave laser operation based on waveguide structures in neodymium doped calcium niobium gallium garnet disordered crystal. Laser wavelength selection through the waveguide cross section…
Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the…
Recent research and development in the mid-infrared (IR) wavelength range (2-20 um) for a variety of applications, such as trace gas monitoring, thermal imaging, and free space communications have shown tremendous and fascinating progress.…
In this contribution, we review the results of the ALSI project (Advanced Laser-writing for Stellar Interferometry), aimed at assessing the potential of ultrafast laser writing to fabricate mid-infared integrated optics (IO) devices with…
Low-dimensional multiferroic materials hold great promises in miniaturized device applications such as nanoscale transducers, actuators, sensors, photovoltaics, and nonvolatile memories. Here, using first-principles theory we predict that…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of silicon-based microelectronics.…
Existence of van der Waals gaps renders two-dimensional (2D) materials ideal passages of lithium for being used as anode materials. However, the requirement of good conductivity significantly limits the choice of 2D candidates. So far only…