Related papers: Mid-infrared group-IV nanowire laser
Semiconductor core$-$shell nanowires based on the GaAs substrate are building blocks of many photonic, photovoltaic and electronic devices, thanks to the associated direct band-gap and the highly tunable optoelectronic properties. The…
Raman lasers is an actively developing field of nonlinear optics aiming to create efficient frequency converters and various optical sensors. Due to the growing importance of ultracompact chip-scale technologies, there is a constant demand…
In recent years, self-assembled semiconductor nanowires have been successfully used as ultra-sensitive cantilevers in a number of unique scanning probe microscopy (SPM) settings. We describe the fabrication of ultra-low dissipation…
Laser micro-welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon and other technology-essential…
This study reports the successful fabrication of high-positive refractive index change waveguides, exceeding 0.02 in fluoride glasses, marking a significant advancement in integrated optical components for visible to mid-infrared…
GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatible with silicon processing standards. These attributes make…
Proposed is a new laser material for the making of active elements of tunable lasers for mid IR region (4-5 mkm) - Zn1-xMgxSe (0.11<x<0.42) single crystals doped with Fe2+ ions. The optical transmission spectra of Fe2+:Zn0.89Mg0.11Se and…
Low-noise lasers are of central importance in a wide variety of applications, including high spectral-efficiency coherent communication protocols, distributed fibre sensing, and long distance coherent LiDAR. In addition to low phase noise,…
We report enhanced nonlinear optics in nanowires, waveguides, and ring resonators by introducing layered two-dimensional (2D) graphene oxide (GO) films through experimental demonstration. The GO films are integrated on silicon-on-insulator…
Integrated silicon nitride (Si3N4) resonators have emerged as a leading platform for nonlinear photonics, yet generating light at wavelength in the ultraviolet (UV) has remained elusive in single-resonator systems. Here we report the first…
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range.…
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase…
Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible…
We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were…
Deeply subwavelength lasers (or nanolasers) are highly demanded for compact on-chip bioimaging and sensing at the nanoscale. One of the main obstacles for the development of single-particle nanolasers with all three dimensions shorter than…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
We report the demonstration of continuous-wave (CW) lasing at room temperature from a III-V semiconductor nanowire integrated into a Si photonic crystal (PhC) cavity. Conventional hybrid nanowire lasers [M. Takiguchi. et.al., APL Photonics,…
Layered 2D graphene oxide (GO) films are integrated with silicon nitride (SiN) waveguides to experimentally demonstrate an enhanced Kerr nonlinearity via four wave mixing (FWM). Owing to the strong light matter interaction between the SiN…
The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrared Si photonics. For chemical vapor deposition of GeSn, the…
Higher resolution demands for semiconductor lithography may be fulfilled by higher numerical aperture (NA) systems. However, NAs more than the photoresist refractive index (~1.7) cause surface confinement of the image. In this letter we…