Related papers: Mid-infrared group-IV nanowire laser
The recent synthesis of MoSi2N4 material, along with theoretical predictions encompassing the entire family of chemical analogs, has opened up a new array of low-dimensional materials for a diverse range of optoelectronics and photovoltaics…
Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate…
Photonic crystals allow unprecedented control over how light is confined, propagates, and interacts with matter. Their development has had a transformative impact on optics and physics, and they remain the central platform for both…
Colloidal 2D semiconductor nanoplatelets are highly efficient light emitters, which exhibit large absorption and emission cross sections, and constitute promising laser gain media. However, if dispersed in solutions, such nanoplatelets lack…
We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 degrees Celsius) temperatures. The spectra of these samples…
Infrared imaging is a crucial technique in a multitude of applications, including night vision, autonomous vehicles navigation, optical tomography, and food quality control. Conventional infrared imaging technologies, however, require the…
Nanolasers operate with a minimal amount of active material and low losses. In this regime, single layers of transition-metal dichalcogenides (TMDs) are being investigated as next generation gain materials due to their high quantum…
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
Solution-processed lead halide perovskites have shown very bright future in both solar cells and microlasers. Very recently, the nonlinearity of perovskites started to attract considerable research attention. Second harmonic generation and…
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap…
We report enhanced nonlinear optics in complementary metal oxide semiconductor compatible photonic platforms through the use of layered two dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon on insulator…
Despite the ongoing progress in integrated optical frequency comb technology, compact sources of short bright pulses in the mid-infrared wavelength range from 3 {\mu}m to 12 {\mu}m so far remained beyond reach. The state-of-the-art…
The generation of dissipative Kerr solitons in optical microresonators has provided a route to compact frequency combs of high repetition rate, which have already been employed for optical frequency synthesizers, ultrafast ranging, coherent…
In this article, we introduce the concept of a dielectric nanolaser that is nanoscopic in all spatial dimensions. Our proposal is based on dielectric nanoparticles of high refractive index, e.g., silicon, acting as a (passive) cavity…
Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their…
GeSn has emerged as a promising semiconductor with optoelectronic functionality in the mid-infrared, with the potential of replacing expensive III-V technology for monolithic on-chip Si photonics. Multiple challenges to achieve…
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial…
Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical…
Two types of optical metamaterials operating at near-IR and mid-IR frequencies, respectively, have been designed, fabricated by nanoimprint lithography (NIL), and characterized by laser spectroscopic ellipsometry. The structure for the…