Related papers: Hanle effect in current induced spin orientation
The electric Hall effect (EHE) is a newly identified Hall effect characterized by a perpendicular electric field inducing a transverse charge current in two-dimensional (2D) systems. Here, we propose a spin and valley version of EHE. We…
The intrinsic spin-orbit coupling in the 2D staggered monolayer semiconductors is very large as compared to graphene. The large spin orbit interaction in these materials leads to the opening of a gap in the energy spectrum and…
The Hanle effect describes suppression of spin polarization due to precession in a magnetic field. This is a standard spintronics tool and it gives access to the spin lifetime of samples in which spins are generated homogeneously. We…
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very…
The anomalous Hall effect is mainly used to probe the magnetization orientation in ferromagnetic materials. A less explored aspect is the torque acting back on magnetization, an effect that can be important at high currents. The spin-orbit…
Positive signs of the effective g-factors for free electrons in the conduction band and electrons localized on deep paramagnetic centers have been measured in nitrogen dilute alloy GaAs{0.979}N{0.021} at room temperature. The g-factor signs…
We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation…
Coupling of spin states and space motion of conduction electrons due to spin-orbit interaction opens up possibilities for manipulation of the electron spins by electrical means. It is shown here that spin orientation of a two-dimensional…
We consider the spin-current driven dynamics of a magnetic nanostructure in a conductive magnetic wire under a heat gradient in an open circuit, spin Seebeck effect geometry. It is shown that the spin-current scattering results in a…
Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle…
It is shown that the spin orientation of free electrons occurs in low-symmetry semiconductor structures if only the electron gas is driven out of thermal equilibrium with the crystal lattice. The proposed mechanism of such a thermal…
The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional…
We observe anisotropic Hanle lineshape with unequal in-plane and out-of-plane non-local signals for spin precession measurements carried out on lateral metallic spin valves with transparent interfaces. The conventional interpretation for…
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…
Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and detect spin currents. In this context, the spin Hall effect…
Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of…
Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…
Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…
We study electronic transport in graphene/ferromagnetic insulator hybrid devices. The system comprises an armchair graphene nanoribbon with a lens-shaped EuO ferromagnetic insulator layer deposited on top of it. When the device supports a…