Related papers: Hanle effect in current induced spin orientation
The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature. No inverted-Hanle-related signal was observed in a…
We analyze the effect known as "spin current swapping" (SCS) due to electron-impurity scattering in a uniform spin-polarized two-dimensional electron gas. In this effect a primary spin current $J_i^a$ (lower index for spatial direction,…
We study the depolarization of optically oriented electrons in quantum wells subjected to an in-plane magnetic field and show that the Hanle curve drastically depends on the carrier mobility. In low-mobility structures, the Hanle curve is…
We describe an angularly asymmetric interface-scattering mechanism which allows to spatially separate the electrons in the two low-energy valleys of bilayer graphene. The effect occurs at electrostatically defined interfaces separating…
Valley asymmetry of the electron spectrum in transition metal dichalcogenides (TMDs) originates from the spin-orbit coupling. Presence of spin-orbit fields of opposite signs for electrons in K and K' valleys in combination with possibility…
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…
We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…
We uncover two anomalous features in the nonlocal transport behavior of two-dimensional metallic materials with spin-orbit coupling. Firstly, the nonlocal resistance can have negative values and oscillate with distance, even in the absence…
The precession of magnon pseudospin about the equilibrium pseudofield, the latter capturing the nature of magnonic eigen-excitations in an antiferromagnet, gives rise to the magnon Hanle effect. Its realization via electrically injected and…
This is an overview of current-induced spin polarization in gyrotropic semiconductor nanostructures. Such a spin polarization as response to a charge current may be classified as the inverse of the spin-galvanic effect, and sometimes is…
We consider graphene deposited on monolayers of such transition-metal dichalcogenides like MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$. Our key objective is to study the impact of relative twist angle between the monolayers on the…
Electrical current can be completely spin polarized in a class of materials known as half-metals, as a result of the coexistence of metallic nature for electrons with one spin orientation and insulating for electrons with the other. Such…
In multiferroic oxides with a transverse helical magnetic order, the magnetization exchange coupling is sinusoidally space-dependent. We theoretically investigate the spin-dependent electron grating effect in…
As a relativistic quantum mechanical effect, it is shown that the electric field exerting a transverse force on an electron spin 1/2 only if the electron is moving and the spin is polarized along the electric field. The spin force, analogue…
The theory of spin orientation of two-dimensional (2D) electron gas has been developed for intrasubband indirect optical transitions. The monopolar optical orientation of electrons in the conduction band is caused by the indirect scattering…
In addition to spin, electrons in many materials possess an additional pseudo-spin degree of freedom known as 'valley'. In materials where the spin and valley degrees of freedom are weakly coupled, they can be both excited and controlled…
In the past decade, chiral materials have drawn significant attention because it is widely claimed that they can act as spin injectors/detectors due to the chirality-induced spin selectivity (CISS) effect. Nevertheless, the microscopic…
Graphene sandwiched between semiconducting monolayers of ferromagnet Cr$_2$Ge$_2$Te$_6$ and transition-metal dichalcogenide WS$_2$ acquires both spin-orbit (SO), of valley-Zeeman and Rashba types, and exchange couplings. Using…
Magneto-electric effect, that is an appearance of magnetisation induced by electric current is allowed by symmetry in metals with crystal structure without space inversion. The microscopic origin of this effect is spin-orbit coupling of…