Related papers: Oxide MBE-ARPES at SSRL Beamline 5-2
Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we…
We report the synthesis and characterization of thin films of the Weyl semimetal NbAs grown on GaAs (100) and GaAs (111)B substrates. By choosing the appropriate substrate, we can stabilize the growth of NbAs in the (001) and (100)…
Understanding the growth of organic semi-conducting molecules with shape anisotropy is of high relevance to the processing of optoelectronic devices. This work provides insight into the growth of thin films of the prototypical rodlike…
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is…
Sb thin films have attracted wide interests due to their tunable band structure, topological phases, and remarkable electronic properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by…
The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area…
Graphene-based moir\'e superlattices are now established as an interesting platform for strongly-correlated many-electron physics, and have so far been characterized mainly by transport and scanning tunneling microscopy (STM) measurements.…
Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates,…
We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray…
High quality MgB2 thin films have been obtained by pulsed laser deposition both on MgO and on Al2O3 substrates using different methods. In the standard two-step procedure, an amorphous precursor layer is deposited at room temperature…
We studied the structural and magnetic properties of \textit{in-situ} grown iron mononitride (FeN) thin films. Initial stages of film growth were trapped utilizing synchrotron based soft x-ray absorption near edge spectroscopy (XANES) at…
A beam profile monitor utilizing visible synchrotron radiation (SR) from a bending magnet has been designed and installed in Cornell Electron-Positron Storage Ring (CESR). The monitor employs a double-slit interferometer to measure both the…
We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591…
We present a large sample (20 in total) of optical spectra of Small Magellanic Cloud (SMC) High-Mass X-ray Binaries obtained with the 2dF spectrograph at the Anglo-Australian Telescope. All of these sources are found to be Be/X-ray binaries…
We report the growth of undoped and Fe (2 and 5 at. percentage) doped molybdenum oxide thin films on c-plane of sapphire substrate using pulsed laser ablation. X-ray diffraction results show that the films are oriented in (100) direction…
Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier…
The authors report in situ Auger electron spectroscopy (AES) of the surfaces of complex oxides thin films grown by pulsed laser deposition (PLD). The authors demonstrate the utility of the technique in studying chemical composition by…
The superconductor Sn$_{1-x}$In$_{x}$Te is derived from the topological crystalline insulator SnTe and is a candidate topological superconductor. So far, high-quality thin films of this material have not been available, even though such…
The generation of ultra-relativistic positron beams with short duration ($\tau_{e^+} \leq 30$ fs), small divergence ($\theta_{e^+} \simeq 3$ mrad), and high density ($n_{e^+} \simeq 10^{14} - 10^{15}$ cm$^{-3}$) from a fully optical setup…
Antimony sulfide (Sb$_2$S$_3$), a compound of earth-abundant elements with highly anisotropic, quasi-layered crystal structure, triggered growing interest as a solar absorber in photovoltaics and as a phase change material in memory…