Related papers: Oxide MBE-ARPES at SSRL Beamline 5-2
Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gapless semiconductor (SGS), grown by three different methods: ultra-high vacuum magnetron spattering, Ar-ion beam assisted sputtering, and molecular beam epitaxy, are investigated…
The response of Low Gain Avalanche Diodes (LGADs), a type of thin silicon detector with internal gain, to X-rays of energies between 6-16~keV was characterized at the Stanford Synchrotron Radiation Lightsource (SSRL). The utilized beamline…
Angle-resolved photoemission spectroscopy (ARPES) is the key momentum-resolved technique for direct probing of the electronic structure of a material. However, since it is very surface-sensitive, it has been applied to a relatively small…
Angle-resolved photoemission spectroscopy (ARPES) is one of the most powerful experimental techniques in condensed matter physics. Synchrotron ARPES, which uses photons with high flux and continuously tunable energy, has become particularly…
We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to…
(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states…
A synchrotron radiation beamline in the photon energy range of 18 - 240 eV and an electron spectroscopy end station have been constructed at the 3 GeV Diamond Light Source storage ring. The instrument features a variable polarisation…
Angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution ({\mu}-ARPES), has become a powerful tool for studying quantum materials. To achieve sub-micrometer or even nanometer-scale spatial resolution, it is important…
We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic…
As-grown superconducting MgB_2 thin films have been grown on SrTiO_3(001), MgO(001), and Al_2O_3(0001) substrates by a molecular beam epitaxy (MBE) method with novel co-evaporation conditions of low deposition rate in ultra-high vacuum. The…
Three storage ring lattices have been designed as options for a future upgrade of the Stanford synchrotron radiation lightsource (SSRL). The three options differ in circumference and targeted future site, with one to be built in the tunnel…
Synchrotron-based x-ray reflectivity is increasingly employed as an \textit{in situ} probe of surface morphology during thin film growth, but complete interpretation of the results requires modeling the growth process. Many models have been…
Resonant soft X-ray scattering (RSXS) is a powerful technique for probing both spatial and electronic structures within solid-state systems. We present a newly developed RSXS capability at beamline 13-3 of the Stanford Synchrotron Radiation…
The recent study of oxides led to the discovery of several new fascinating physical phenomena. High-temperature superconductivity, colossal magnetoresistance, dilute magnetic doping, or multiferroicity were discovered and investigated in…
We report the growth of thin films of Sr1-xCaxRuO3 on SrTiO3 and MgO substrates by metalorganic aerosol deposition. The structure and microstructure is characterized by X-ray diffraction and room-temperature scanning tunnelling microscopy…
We report x-ray resonant magnetic scattering (XRMS) and resonant inelastic x-ray scattering (RIXS) studies of epitaxially-strained $\mathrm{Sr_2IrO_4}$ thin films. The films were grown on $\mathrm{SrTiO_3}$ and…
The GALAXIES beamline at the SOLEIL synchrotron is dedicated to inelastic x-ray scattering (IXS) and photoelectron spectroscopy (HAXPES) in the 2.3-12 keV hard x-ray range. These two techniques offer powerful, complementary methods of…
We demonstrate the capability of growing high quality ultrathin films of the topological insulators Bi2Se3 and Bi2Te3 using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band…
We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analyses reveal stoichiometric layered film growth with atomically…
As-grown superconducting thin films of MgB2 were prepared by molecular beam epitaxy (MBE), and studied by X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). Only films prepared at temperatures between 150 and 320 deg. showed…