Related papers: Oxide MBE-ARPES at SSRL Beamline 5-2
Ternary Zintl phosphides are promising light-absorbing semiconductors for thin-film optoelectronic applications, but strategies for controlling their microstructure and optoelectronic quality remain underexplored. Here, we report the…
Thin Cr films 28-nm thick deposited on glass substrates were processed by scanning low-intensity femtosecond laser pulses with energy well below single-pulse damage threshold. Two types of laser-induced periodic surface structures (LIPSS)…
Thin film oxides are a source of endless fascination for the materials scientist. These materials are highly flexible, can be integrated into almost limitless combinations, and exhibit many useful functionalities for device applications.…
Here we demonstrate the controlled growth of Bi(110) and Bi(111) films on an (insulating) $\alpha$-Al$_2$O$_3$(0001) substrate by surface X-ray diffraction and X-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K,…
Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy…
Silicon thin films for coverages ($\theta$) between 0.3 and 3 monolayers have been grown on rutile \ce{TiO2}(110)-(1x1) at room temperature and studied by x-ray and ultra-violet photoelectron spectroscopies, Auger electron spectroscopy, and…
We have performed Small Angle X-ray Scattering (SAXS) on uniaxially strained aerogels and measured the strain-induced structural anisotropy. We use a model to connect our SAXS results to anisotropy of the 3He quasiparticle mean free path in…
SrMoO$_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_3$ using the molecular beam epitaxy (MBE) technique under a…
We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray…
We study resonant x-ray scattering (RXS) at Np M_{4,5} edges in the triple-\textbf{k} multipole ordering phase in NpO_{2}, on the basis of a localized electron model. We derive an expression for RXS amplitudes to characterize the spectra…
Coupling between spin, orbital, charge, and lattice degrees of freedom in transition-metal oxides produces a variety of electronic and magnetic phenomena of importance for future technologies. Here, we explore the electronic band structure…
Solid-phase epitaxy (SPE) and other three-dimensional epitaxial crystallization processes pose challenging structural and chemical characterization problems. The concentration of defects, the spatial distribution of elastic strain, and the…
We have investigated the transport and optical properties along the c-axis of a-axis-oriented Sr2IrO4 epitaxial thin-films grown on LaSrGaO4 (100) substrates. The c-axis resistivity is approximately one order of magnitude larger than that…
Highly smooth and c-axis oriented superconducting MgB2 thin films were prepared by pulsed laser deposition (PLD) with off-axis geometry. The films were deposited on Al2O3-C substrates perpendicularly aligned to a stoichiometric MgB2 target…
Co2MnSi (CMS) films of different thicknesses (20, 50 and 100 nm) were grown by radio frequency (RF) sputtering on a-plane sapphire substrates. Our X-rays diffraction study shows that, in all the samples, the cubic <110> CSM axis is normal…
Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we…
Two-dimensional dopant layers ($\delta$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and…
Monolayers of ReS2 were grown by a chemical vapor deposition technique on SiO2/Si substrates and investigated at room temperature by using micro-Raman, micro-photoluminescence (PL) and absorbance spectroscopies. The Raman scattering…
This study investigates the molecular beam epitaxial (MBE) growth of titanium nitride (TiN) thin films, achieving a high residual resistivity ratio (RRR) of 15.8. We observed a strong correlation between growth temperature and crystalline…
Recently, it was demonstrated that the quasiparticle dynamics, the layer-dependent charge and potential, and the c-axis screening coefficient could be extracted from measurements of the spectral function of few layer graphene films grown…