Related papers: Initialization-Free Multistate Memristor: Synergy …
Enabling field-free current-induced switching of perpendicular magnetization is essential for advancing spin-orbit-torque magnetic random access memory technology. Our research on the Pt/Co/Ru/RuO2(101) system has successfully demonstrated…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit…
Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…
A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step…
We propose the multi-state complete-active-space second-order perturbation theory spin-orbit method (MS-CASPT2-SO) for electronic structure calculations. It is a two-step spin-orbit coupling method that does not make use of energy shifts…
We propose an analog implementation of the transcendental activation function leveraging two spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and a CMOS inverter. The proposed analog neuron circuit consumes 1.8-27x…
Sensorless control of Permanent-Magnet Synchronous Motors (PMSM) at low velocity remains a challenging task. A now well-established method consists in injecting a high-frequency signal and use the rotor saliency, both geometric and…
Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that…
The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic…
By integrating the local voltage-controlled magnetic anisotropy (VCMA) effect, Dzyaloshinskii-Moriya interaction (DMI) effect, and spin-orbit torque (SOT) effect, we propose a novel device structure for field-free magnetic tunnel junction…