Related papers: Initialization-Free Multistate Memristor: Synergy …
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE…
The use of electric fields applied across magnetic heterojunctions that lack spatial inversion symmetry has been previously proposed as a non-magnetic mean of controlling localized magnetic moments through spin-orbit torques (SOT). The…
In this work we propose a novel solid-state platform for creating quantum simulators based on implanted spin centers in semiconductors. We show that under the presence of an external magnetic field, an array of $S=1$ spin centers…
Spin-orbit torque (SOT) enables efficient current-driven control of magnetization, offering a promising pathway toward low-power spintronic devices. However, the origin and propagation of both damping-like (DL) and field-like (FL) SOTs in…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur…
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and…
Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices such as magnetic memory,…
Exploiting spin degree of freedom of electron a new proposal is given to characterize spin-based logical operations using a quantum interferometer that can be utilized as a programmable spin logic device (PSLD). The ON and OFF states of…
Processing-in-memory (PIM) seeks to eliminate computation/memory data transfer using devices that support both storage and logic. Stateful logic techniques such as IMPLY, MAGIC and FELIX can perform logic gates within memristive crossbar…
Previous studies have demonstrated spin-orbit torque (SOT) switching of Mn3Sn where the spin polarization lies in the kagome plane (configuration I). However, the critical current density ($ J_{crit}$) is unrealistically large ($…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques…
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…
Three-terminal magnetic tunnel junction (MTJ), where non-volatile magnetization state can be switched via spin orbit torque (SOT), is attracting massive research interests since it is featured by high speed, low power, nearly unlimited…
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT…
Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into…
The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with…
We have studied the spin orbit torque (SOT) in Pt/Co/Ir multilayers with 3 repeats of the unit structure. As the system exhibits oscillatory interlayer exchange coupling (IEC) with varying Ir layer thickness, we compare the SOT of films…
We show that current induced magneto-logic gates like AND, OR and NOT can be designed with the simple architecture involving a single nano spin-valve pillar, as an extension of our recent work on spin-torque-driven magneto-logic universal…
Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the…