Related papers: On-Demand Growth of Semiconductor Heterostructures…

As-grown superconducting MgB_2 thin films have been grown on SrTiO_3(001), MgO(001), and Al_2O_3(0001) substrates by a molecular beam epitaxy (MBE) method with novel co-evaporation conditions of low deposition rate in ultra-high vacuum. The…

Presently available high-energy proton beams in circular accelerators carry enough momentum to accelerate high-intensity electron and positron beams to the TeV energy scale over several hundred meters of the plasma with a density of about…

Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction…

Metal additive manufacturing (AM) opens the possibility for spatial control of as-fabricated microstructure and properties. However, since the solid state diffusional transformations that drive microstructure outcomes are governed by…

The embedding-based representation learning is commonly used in deep learning recommendation models to map the raw sparse features to dense vectors. The traditional embedding manner that assigns a uniform size to all features has two…

In this paper, we develop a deep learning (DL)-guided hybrid beam and power allocation approach for multiuser millimeter-wave (mmWave) networks, which facilitates swift beamforming at the base station (BS). The following persisting…

Vision Transformer (ViT) suffers from data scarcity in semi-supervised learning (SSL). To alleviate this issue, inspired by masked autoencoder (MAE), which is a data-efficient self-supervised learner, we propose Semi-MAE, a pure ViT-based…

Selective area growth of InN nanorods by plasma assisted molecular beam epitaxy is demonstrated. Molybdenum is found to be a suitable mask material at the low substrate temperature of 475 C needed for the growth of InN nanocolumns. The…

The fabrication of three-dimensional (3D) nanostructures is of great interest to many areas of nanotechnology currently challenged by fundamental limitations of conventional lithography. One of the most promising direct-write methods for 3D…

For many decades High Energy Physics (HEP) instrumentation has been concentrated on detectors of ionizing radiation -- where the energy of incident particles or photons is sufficient to create mobile charge in gas, liquid, or solid…

Numerical simulations for engineering applications solve partial differential equations (PDE) to model various physical processes. Traditional PDE solvers are very accurate but computationally costly. On the other hand, Machine Learning…

Quantitative phase imaging (QPI) through multi-core fibers (MCFs) has been an emerging in vivo label-free endoscopic imaging modality with minimal invasiveness. However, the computational demands of conventional iterative phase retrieval…

To address privacy concerns and reduce network latency, there has been a recent trend of compressing cumbersome recommendation models trained on the cloud and deploying compact recommender models to resource-limited devices for the…

Semiconductor manufacturing is a notoriously complex and costly multi-step process involving a long sequence of operations on expensive and quantity-limited equipment. Recent chip shortages and their impacts have highlighted the importance…

Reflection high-energy electron diffraction (RHEED) is a ubiquitous in situ molecular beam epitaxial (MBE) characterization tool. Although RHEED can be a powerful means for crystal surface structure determination, it is often used as a…

Type-II nodal line semimetal (NLS) is a new quantum state hosting one-dimensional closed loops formed by the crossing of two bands which have the same sign in their slopes along the radial direction of the loop. According to the theoretical…

The Bi-Te binary system, characterized by the homologous series of the (Bi2)m(Bi2Te3)n, has always attracted research interest for its layered structures and potential in advanced materials applications. Despite Bi2Te3 has been extensively…

We present a new empirical pseudopotential (EPM) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using the periodic boundary conditions. To treat the non-equilibrium condition,…

Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we…

We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires…