Related papers: An ambipolar single-charge pump in silicon
Quantum pumping holds great potential for future applications in micro- and nanotechnology. Its main feature, dissipationless charge transport, is theoretically possible via several different mechanisms. However, since no unambiguous…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and…
We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper…
A silicon electron pump operating at the temperature of liquid helium has demonstrated repeatable operation with sub-ppm accuracy. The pump current, approximately 168 pA, is measured by three laboratories, and the measurements agree with…
We study adiabatic charge transfer in a superconducting Cooper pair pump, focusing on the influence of current measurement on coherence. We investigate the limit where the Josephson coupling energy $E_J$ between the various parts of the…
We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an…
We analyze time-dependent transport through a quantum dot with electron-electron interaction that is statically tunable to both repulsive and attractive regimes, or even dynamically driven. Motivated by the recent experimental realization…
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and…
We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through…
Analysis of room-temperature current-voltage (I-V) characteristics of a silicon box in a nanopillar transistor suggests that a weak electromechanical coupling of 0.17 is responsible for the stable tunnel of single-electron. The dynamics…
Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such…
We study a one-dimensional quantum pump composed of two oscillating delta-functional barriers. The linear and non-linear regimes are considered. The harmonic signal applied to any or both barriers causes the stationary current. The…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each…
Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave…
Single-parameter adiabatic charge pumping, induced by a nearby radio-frequency antenna, is achieved in suspended carbon nanotubes close to the mechanical resonance. The charge pumping is due to an important dynamic adjustment of the…
A well-characterised sample of silicon tunable-barrier electron pump has been operated at a frequency of 2 GHz using a custom drive waveform, generating a pump current of 320 pA. Precision measurements of the current were made as a function…
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…
The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored…