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Related papers: An ambipolar single-charge pump in silicon

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The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to…

Mesoscale and Nanoscale Physics · Physics 2015-06-23 B. Voisin , J. Salfi , J. Bocquel , R. Rahman , S. Rogge

We study non-adiabatic two-parameter charge and spin pumping through a single-level quantum dot with Coulomb interaction. For the limit of weak tunnel coupling and in the regime of pumping frequencies up to the tunneling rates, $\Omega…

Mesoscale and Nanoscale Physics · Physics 2011-10-10 Fabio Cavaliere , Michele Governale , Jürgen König

Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…

We investigate adiabatic charge pumping in disordered system in one dimension with open and closed boundary conditions. In contrast to the Thouless charge pumping, the system has no gap even though all the states are localized, i.e., strong…

Disordered Systems and Neural Networks · Physics 2009-11-13 Chyh-Hong Chern , Shigeki Onoda , Shuichi Murakami , Naoto Nagaosa

In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure…

Mesoscale and Nanoscale Physics · Physics 2017-02-23 P. C. Spruijtenburg , S. V. Amitonov , F. Mueller , W. G. van der Wiel , F. A. Zwanenburg

Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable…

The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two such devices. The next step towards promising…

Mesoscale and Nanoscale Physics · Physics 2015-06-12 B. Roche , R. -P. Riwar , B. Voisin , E. Dupont-Ferrier , R. Wacquez , M. Vinet , M. Sanquer , J. Splettstoesser , X. Jehl

We study the impact of off-resonant tunneling and coherences on the electron pumping through quantum dots. Thereby, we focus on two electron-pump setups where lowest-order tunneling processes are suppressed and the pump is exclusively…

Mesoscale and Nanoscale Physics · Physics 2026-02-27 Lukas Litzba , Gernot Schaller , Jürgen König , Nikodem Szpak

A periodically driven quantum capacitor may function as an on-demand single electron source as it has recently been demonstrated experimentally. However, the accuracy at which single electrons are emitted is not yet understood. Here we…

Mesoscale and Nanoscale Physics · Physics 2015-03-14 Mathias Albert , Christian Flindt , Markus Büttiker

The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems…

Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed…

Superconductivity · Physics 2010-03-12 S. V. Lotkhov , A. Kemppinen , S. Kafanov , J. P. Pekola , A. B. Zorin

We study the dynamics of electron and energy currents in a nonadiabatic pump. The pump is a quantum dot nanojunction with time-varying gate potential and tunnel couplings to the leads. The leads are unbiased and maintained at the same…

Mesoscale and Nanoscale Physics · Physics 2020-03-11 Eduardo C. Cuansing , Jian-Sheng Wang , Juzar Thingna

We present a realization of quantized charge pumping. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavelength is twice the dot length is used to pump single…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 J. Ebbecke , N. E. Fletcher , T. J. B. M. Janssen , F. J. Ahlers , M. Pepper , H. E. Beere , D. A. Ritchie

Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…

Mesoscale and Nanoscale Physics · Physics 2014-11-11 C. H. Yang , A. Rossi , N. S. Lai , R. Leon , W. H. Lim , A. S. Dzurak

We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 H. W. Liu , T. Fujisawa , H. Inokawa , Y. Ono , A. Fujiwara , Y. Hirayama

We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the…

Mesoscale and Nanoscale Physics · Physics 2018-09-28 S. P. Giblin , P. See , J. D. Fletcher , T. J. B. M. Janssen , J. P. Griffiths , G. A. C. Jones , I. Farrer , M. Kataoka

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum…

A macroscopic fluid pump works according to the law of Newtonian mechanics and transfers a large number of molecules per cycle (of the order of 10^23). By contrast, a nano-scale charge pump can be thought as the ultimate miniaturization of…

Mesoscale and Nanoscale Physics · Physics 2011-11-24 F. Giazotto , P. Spathis , S. Roddaro , S. Biswas , F. Taddei , M. Governale , L. Sorba

We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 W. H. Lim , F. A. Zwanenburg , H. Huebl , M. Mottonen , K. W. Chan , A. Morello , A. S. Dzurak

Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…

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