Related papers: Heavy-hole spin relaxation in quantum dots: Isotro…
We measure the frequency spectra of random spin fluctuations, or "spin noise", in ensembles of (In,Ga)As/GaAs quantum dots (QDs) at low temperatures. We employ a spin noise spectrometer based on a sensitive optical Faraday rotation…
Semiconductor quantum dots (QDs) offer a platform to explore the physics of quantum electronics including spins. Electron spins in QDs are considered good candidates for quantum bits in quantum information processing, and spin control and…
Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and…
We report on the quantum interference and spin accumulation on double quantum dots with Rashba spin-orbit coupling and electron-electron interaction, based on the Keldysh nonequilibrium Green function formalism. It is shown that Rashba…
We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…
Decoherence caused by nuclear field fluctuations is a fundamental obstacle to the realization of quantum information processing using single electron spins. Alternative proposals have been made to use spin qubits based on valence band holes…
Hole qubits in germanium quantum dots are promising candidates for coherent control and manipulation of the spin degree of freedom through electric dipole spin resonance. We theoretically study the time dynamics of a single heavy-hole qubit…
We show that the g-factor and the spin-flip time T_{1} of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave function penetration into the barrier. When this electric…
The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC)…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
We investigate transport properties of stable gate-defined quantum dots formed in an InSb$_{0.87}$As$_{0.13}$ quantum well. High $\textit{g}$-factor and strong spin-orbit-coupling make InSb$_x$As$_{1-x}$ a promising platform for exploration…
Strong effects of optical polarization anisotropy observed previously in the quantum wells subjected to the in-plane magnetic field arrive at complete description within microscopic approach. Theory we develop involves two sources of…
The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet…
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…
Spin-squeezing in systems with single-particle control is a well-established resource of modern quantum technology. Applied in an optical lattice clock can reduce the statistical uncertainty of spectroscopic measurements. Here, we consider…
In this paper, we investigate the impact of gating potential and magnetic field on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit. We show that a…
We have performed all-optical measurements of spin relaxation in single self-assembled InAs/GaAs quantum dots (QD) as a function of static external electric and magnetic fields. To study QD spin dynamics we measure the degree of resonant…
Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such…
Hole spin relaxation in $p$-type (111) GaAs quantum wells is investigated in the case with only the lowest hole subband, which is heavy-hole like in (111) GaAs/AlAs and light-hole like in (111) GaAs/InP quantum wells, being relevant. The…