We show that the g-factor and the spin-flip time T_{1} of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave function penetration into the barrier. When this electric field is of the order of 10^{5} V/cm, g and T_{1} show high sensitivity to dot radius and magnetic field arising from the interplay between Rashba and Dresselhaus spin-orbit interactions. This result opens new possibilities for the design of a quantum dot spin quantum computer where g-factor and T_{1} can be engineered by manipulating the spin-orbit coupling through external gates.
@article{arxiv.cond-mat/0306417,
title = {Gate control of spin dynamics in III-V semiconductor quantum dots},
author = {Rogerio de Sousa and S. Das Sarma},
journal= {arXiv preprint arXiv:cond-mat/0306417},
year = {2009}
}