Related papers: Design of a Modular GaN-based Three-Phase Three-Le…
The paper presents a straightforward modelling approach to compute the power loss distribution in GaN HEMT based three phase and three level (3L) active neutral point clamped (ANPC) inverters, for different pulse width modulated techniques.…
This paper presents a design and implementation of a high-power Gallium Nitride (GaN)-based multilevel Hbridge inverter to excite wireless charging coils for the wireless power transfer of electric vehicles (EVs). Compared to the…
Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications…
In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities…
This paper proposes a new DC-AC converter with a less number of semiconductor switches and therefore gate drive and control circuit components. A salient feature of this inverter is its pure sinusoidal line-to-line voltages with no need for…
Multilevel inverters are used to improve powerquality and reduce component stresses. This paper describesand compares two multilevel cascaded three phase inverterimplementations with two different modulation techniques: PhaseShifted Pulse…
This paper reviews commonly used three-phase isolated AC-DC converters and introduces a novel Y-configuration Active Bridge (YAB) converter for single-stage isolated AC-DC power conversion. The proposed YAB addresses the limitations of…
A robust power gating design using Graphene Nano-Ribbon Field Effect Transistors (GNRFET) is proposed using 16nm technology. The Power Gating (PG) structure is composed of GNRFET as a power switch and MOS power gated module. The proposed…
The circuit presented in this paper aims at providing three 40 Vpp 50Hz AC voltages sources with 120-degree phase separation between them. This is a fully analogue circuit that uses standard, low-cost electronic components without resorting…
$\beta$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits. A novel approach towards attaining a high…
Electro-optic modulators are fundamental components in atomic physics experiments, including trapped-ion systems used in precision metrology and quantum computing. To enable scalable photonic integration, we design and analyze an integrated…
Advances in power electronics have made it possible to achieve high power levels, e.g., reaching GW in grids, or alternatively high output bandwidths, e.g., beyond MHz in communication. Achieving both simultaneously, however, remains…
This article presents novel high speed and low power full adder cells based on carbon nanotube field effect transistor (CNFET). Four full adder cells are proposed in this article. First one (named CN9P4G) and second one (CN9P8GBUFF)…
Transformer terminal equivalents obtained via admittance measurements are suitable for simulating high-frequency transient interaction between the transformer and the network. This paper augments the terminal equivalent approach with a…
Multilevel converters have found many applications within renewable energy systems thanks to their unique capability of generating multiple voltage levels. However, these converters need multiple DC sources and the voltage balancing over…
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high…
A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on (111) silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD) was developed, and a triple mesa etch technique was used to fabricate efficient…
This paper investigates the use of carbon nanotube field effect transistors (CNFETs) for the design of ternary full adder cells. The proposed circuits have been designed based on the unique properties of CNFETs such as having desired…