English

Gallium Nitride FET Model

Applied Physics 2019-09-13 v1 Materials Science
Authors: G. I. Zebrev , V. V. Orlov
View on arXiv ↗ PDF ↗ DOI ↗

Abstract

We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects.

Cite

@article{arxiv.1909.05702,
  title  = {Gallium Nitride FET Model},
  author = {G. I. Zebrev and V. V. Orlov},
  journal= {arXiv preprint arXiv:1909.05702},
  year   = {2019}
}

Comments

IOP Conference Series: Materials Science and Engineering, 5 pages, 2 figures

Related papers

View all related →
Mesoscale and Nanoscale Physics · Physics
Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents
G. I. Zebrev, V. V. Orlov, A. S. Bakerenkov, V. A. Felitsyn
2017-02-22
Mesoscale and Nanoscale Physics · Physics
A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities
Akira Satou, Gen Tamamushi, Kenta Sugawara, Junki Mitsushio +2
2016-08-24
General Physics · Physics
Efficiency Models for GaN-based Light-Emitting Diodes: Status and Challenges
Joachim Piprek
2020-11-18
Mesoscale and Nanoscale Physics · Physics
Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
N. Mavredakis, A. Pacheco-Sanchez, R. Garcia Cortadella, Anton-Guimerà-Brunet +2
2025-06-05
Materials Science · Physics
Donor and Acceptor Characteristics of Native Point Defects in GaN
Zijuan Xie, Yu Sui, John Buckeridge, C. Richard A. Catlow +7
2019-09-04
Mesoscale and Nanoscale Physics · Physics
Graphene Field Effect Transistors: Diffusion-Drift Theory
Gennady I. Zebrev
2011-02-14
Mesoscale and Nanoscale Physics · Physics
Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes
Gennady I. Zebrev, Alexander A. Tselykovskiy, Valentin O. Turin
2012-02-03
Applied Physics · Physics
Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs
Yang Shen, Bing-Yang Cao
2024-01-25
Materials Science · Physics
Energetics of native point defects in GaN: a density-functional study
Giacomo Miceli, Alfredo Pasquarello
2017-04-12
Mesoscale and Nanoscale Physics · Physics
Large-Signal Model of Graphene Field-Effect Transistors -- Part I: Compact Modeling of GFET Intrinsic Capacitances
Francisco Pasadas, David Jiménez
2016-09-07
Materials Science · Physics
Fundamentals of the metal contact to p-type GaN: new multilayer design
Konrad Sakowski, Paweł Strak, Stanislaw Krukowski
2025-09-16
Applied Physics · Physics
Simulation of GaN-Based Light Emitting Diodes Incorporating Composition Fluctuation Effects
Sheikh Ifatur Rahman, Zane Jamal-Eddine, Zhanbo Xia, Mohammad Awwad +2
2022-12-21
Mesoscale and Nanoscale Physics · Physics
A Comprehensive Graphene FET Model for Circuit Design
Saul Rodriguez, Sam Vaziri, Anderson Smith, Sebastien Fregonese +3
2014-05-09
Systems and Control · Electrical Eng. & Systems
A Compact Model for SiC Power MOSFETs for Large Current and High Voltage Operation
Cristino Salcines, Sourabh Khandelwal, Ingmar Kallfass
2021-05-03
Applied Physics · Physics
A Scalable Compact Model for the Static Drain Current of Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Oihana Txoperena, Elias Torres +1
2024-01-29
Systems and Control · Electrical Eng. & Systems
Microcontroller Based Portable Measurement System for GaN and SiC Devices Characterization
Alberto Vella, Giuseppe Galioto, Giuseppe Costantino Giaconia
2023-06-08
Mesoscale and Nanoscale Physics · Physics
Explicit drain current, charge and capacitance model of graphene field-effect transistors
David Jiménez
2012-01-04
Instrumentation and Detectors · Physics
Design of a Modular GaN-based Three-Phase Three-Level ANPC Inverter
Angelo Di Cataldo, Hamed Eivazi, Giuseppe Aiello, Dario Patti +3
2024-06-25
Materials Science · Physics
Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
Pei Zhao, Jyotsna Chauhan, Jing Guo
2009-09-30
Mesoscale and Nanoscale Physics · Physics
Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors
Gennady I. Zebrev, Alexander A. Tselykovskiy, Daria K. Batmanova, Evgeny V. Melnik
2011-12-19
Mesoscale and Nanoscale Physics · Physics
High-Frequency Properties of a Graphene Nanoribbon Field-Effect Transistor
M. Ryzhii, A. Satou, V. Ryzhii, T. Otsuji
2009-11-13
Materials Science · Physics
Defect engineering of ultrathin gallium nitride via electric fields for advanced electronic, magnetic, and gas sensing applications
Yujia Tian, Devesh R. Kripalani, Ming Xue, Kun Zhou
2026-05-27
Applied Physics · Physics
A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors
Aias Asteris, Thai-Son Nguyen, Huili Grace Xing, Debdeep Jena
2026-03-30
Mesoscale and Nanoscale Physics · Physics
A review for compact model of graphene field-effect transistors
Nianduan Lu, Lingfei Wang, Ling Li, Ming Liu
2017-03-30
Systems and Control · Electrical Eng. & Systems
Gallium Nitride (GaN) based High-Power Multilevel H-Bridge Inverter for Wireless Power Transfer of Electric Vehicles
Javad Chevinly, Shervin Salehi Rad, Elias Nadi, Bogdan Proca +4
2024-05-21
R2 v1 2026-06-23T11:13:33.605Z