Related papers: Selecting Alternative Metals for Advanced Intercon…
In response to aggressive scaling demands in semiconductor manufacturing and the growing need to apply sustainable practices, this paper presents a holistic sustainability assessment framework for evaluating alternative metals for advanced…
The challenge of increasing copper (Cu) resistivity with diminishing Cu interconnect dimensions in complementary metal-oxide-semiconductor (CMOS) transistors, along with the imperative for efficient electron transport paths to fulfill…
The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in…
Cu$_x$Al$_{1-x}$ thin films with $0.2 \le x \le 0.7$ have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were used to obtain the Cu$_x$Al$_{1-x}$ electronic structure and…
As interconnect dimensions continue to shrink, the industry-standard copper faces a critical increase in resistivity, presenting a significant hurdle to overall device performance. To overcome this limitation, this work investigates the…
The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing the desirable properties of topological semimetals for…
As silicon detectors in high energy physics experiments require increasingly complex assembly procedures, the availability of a wide variety of interconnect technologies provides more options for overcoming obstacles in generic R&D. Gold…
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a…
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and…
Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction…
Intercalation materials are promising candidates for reversible energy storage and are, for example, used as lithium-battery electrodes, hydrogen-storage compounds, and electrochromic materials. An important issue preventing the more…
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using automated first principles simulations based on density…
The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable…
Complementary-metal-oxide-semiconductor (CMOS) is the most widely spread technology for integrated circuits fabrication. Each foundry offers different technology nodes that are characterized by the minimum feature size, which is the…
Carbon nanotubes have emerged as a possible new material for electronic applications. They show promising characteristics for transistors as well as for interconnects. Here we review their basic properties and focus on the status of…
Monolayer TaS$_{2}$ is being explored as a future liner/barrier to circumvent the scalability issues of the state-of-the-art interconnects. However, its large vertical resistivity poses some concerns and mandates a comprehensive circuit…
Continued scaling into the sub 7 nm regime exacerbates quantum limited resistivity in Cu interconnects. We evaluated layered PdCoO2 and explicitly benchmarked it against Cu to identify mechanisms that maintain conductivity under…
Modular architectures are a promising route toward scalable superconducting quantum processors, but finite fabrication yield and the lack of high quality temporary interconnects impose fundamental limitations on system size. Here, we…
The strong non-linear increase in Cu interconnect line resistance with a decrease in linewidth presents a significant obstacle to their continued downscaling. In this letter we use first principles density functional theory based electronic…
Plasmonics is a research area merging the fields of optics and nanoelectronics by confining light with relatively large free-space wavelength to the nanometer scale - thereby enabling a family of novel devices. Current plasmonic devices at…