Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

Ching-Tzu Chen; Utkarsh Bajpai; Nicholas A. Lanzillo; Chuang-Han Hsu; Hsin Lin; Gengchiau Liang

doi:10.1109/IEDM13553.2020.9371996

Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

Mesoscale and Nanoscale Physics 2021-03-22 v1 Materials Science

Authors: Ching-Tzu Chen , Utkarsh Bajpai , Nicholas A. Lanzillo , Chuang-Han Hsu , Hsin Lin , Gengchiau Liang

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Abstract

The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing the desirable properties of topological semimetals for back-end-of-line (BEOL) interconnects, we use CoSi as an example to demonstrate the decreasing resistance-area product with scaling and provide material-search guidelines.

Keywords

topological semimetals back-end-of-line interconnect metal scaling resistance-area product cosi

Cite

@article{arxiv.2103.10505,
  title  = {Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu},
  author = {Ching-Tzu Chen and Utkarsh Bajpai and Nicholas A. Lanzillo and Chuang-Han Hsu and Hsin Lin and Gengchiau Liang},
  journal= {arXiv preprint arXiv:2103.10505},
  year   = {2021}
}

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4 pages, 12 figures

Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

Abstract

Keywords

Cite

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