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Recent developments in laser-excited photoemission electron microscopy (laser-PEEM) advance the visualization of electronic nematicity and nematic domain structures in iron-based superconductors. In FeSe and…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integrated into the Back End of Line (BEOL) of CMOS technology,…
The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few…
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric…
We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3…
Through stacking engineering of two-dimensional (2D) materials, a switchable interface polarization can be generated through interlayer sliding, so called sliding ferroelectricity, which is advantageous over the traditional ferroelectricity…
Ferroelectric tunnel junctions offer potential for non-volatile memory with low power, fast switching, and scalability, but their performance is limited by a high resistance-area product and a low tunnel electroresistance ratio. To address…
Recent discovery of HfO2-based and nitride-based ferroelectrics that are compatible to the semiconductor manufacturing process have revitalized the field of ferroelectric-based nanoelectronics. Guided by a simple design principle of charge…
Recent advancements underscore the critical need to develop ferroelectric materials compatible with silicon. We systematically explore possible ferroelectric silicon quantum films and discover a low-energy variant (hex-OR-2*2-P) with energy…
Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in…
Integrated visible photonic engines for solid-state quantum defects provide a foundation for scalable quantum networks. While miniaturization is advancing, active manipulation remains limited by the difficulty of achieving simultaneous…
Permalloy Ni$_{80}$Fe$_{20}$ is one of the key magnetic materials in the field of magnonics. Its potential would be further unveiled if it could be deposited in three dimensional (3D) architectures of sizes down to the nanometer. Atomic…
We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic devices. Metal-insulator-semiconductor (MIS)-type devices…
Understanding how optical excitation couples with polarization and interfacial electrostatics in van der Waals (vdW) ferroelectrics (FEs) is essential for the development of light-programmable nanoelectronic and optoelectronic devices.…
The ability to create superlattices in van der Waals (vdW) heterostructures via moir\'e interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and…
Multimodal device operations are essential to advancing the integration of 2D semiconductors in electronics, photonics, information and quantum technology. Precise control over carrier dynamics, particularly exciton generation and…
Augmented Reality (AR) and Virtual Reality (VR), require miniaturized displays with ultrahigh pixel densities. Here, we demonstrate an individually addressable subwavelength OLED pixel based on a nanoscale electrode capable of supporting…
While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…