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Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental…
As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technology has become increasingly urgent. While two-dimensional…
Nonreciprocity is fundamental to photonic and optoelectronic devices such as all-optical diodes for ultrafast optical signal processing. However, previous nonreciprocity is mainly based on linear optical response instead of nonlinear…
Reliability issues stemming from device level non-idealities of non-volatile emerging technologies like ferroelectric field-effect transistors (FeFET), especially at scaled dimensions, cause substantial degradation in the accuracy of…
With thermal issues becoming a major challenge to the development of integrated circuits (ICs), high-thermal-conductivity (high-TC) materials are gaining interest from both the industry and academia, especially for high-density…
Employing many-valued logic (MVL) data processing allows to dramatically increase the performance of computing circuits. Here we propose to employ ferroelectrics for the material implementation of MVL units basing on their ability to pin…
We present a study based on numerical simulations and comparative analysis of recent experimental data concerning the operation and design of FeFETs. Our results show that a proper consideration of charge trapping in the…
Three-dimensional (3D) topological ferroelectric (FE) insulators, in which topological and FE orders naturally coexist, enable field-controlled spintronic devices. In this work, we predict a new structure of bismuth monohalides Bi4Br4 and…
The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration…
The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a crucial role due to the continuous downscaling of device…
Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…
Electron spins confined in silicon quantum dots are promising candidates for large-scale quantum computers. However, the degeneracy of the conduction band of bulk silicon introduces additional levels dangerously close to the window of…
Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable…
Beam selection for millimeter-wave links in a vehicular scenario is a challenging problem, as an exhaustive search among all candidate beam pairs cannot be assuredly completed within short contact times. We solve this problem via a novel…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
Light-emitting diodes based on perovskite nanocrystals (PNCs-LEDs) have gained great interest for next-generation display and lighting technologies prized for their color purity, high brightness and luminous efficiency approaching the…
We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data…
Bismuth ferrite (BiFeO3) is one of the most promising multiferroics with a sufficiently high ferroelectric (FE) and antiferromagnetic transition temperatures, and magnetoelectric (ME) coupling coefficient at room temperature, and thus it is…
Today, there are a plethora of In-Memory Computing (IMC) devices- SRAMs, PCMs & FeFETs, that emulate convolutions on crossbar-arrays with high throughput. Each IMC device offers its own pros & cons during inference of Deep Neural Networks…
Two-dimensional (2D) sliding ferroelectric (FE) metals with ferrimagnetism represent a previously unexplored class of spintronic materials, featuring out-of-plane FE polarization, metallic conductivity, and a finite net magnetization, which…