Related papers: Multi-State, Ultra-thin, BEOL-Compatible AlScN Fer…
We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results…
Electronic nematicity, a correlated state characterized by broken rotational symmetry, has been recognized as a ubiquitous feature intertwined with unconventional electron pairing in various iron-based superconductors. Here we employ…
Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics is a long-standing challenge due to the possible critical…
Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of…
As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the…
Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-line (BEOL) of CMOS front-end processes or through advanced…
Ferroelectric switching is unambigiously demonstrated for the first time in a III-V semiconductor based material: AlScN -- A discovery which could help to satisfy the urgent demand for thin film ferroelectrics with high performance and good…
Hafnium oxide (HfO2), particularly at low-dimensional scales, exhibits extensive promising applications in ultrahigh density devices like low-power logic and non-volatile memory devices due to its compatibility with current semiconductor…
High-speed photonic integrated circuits leveraging the thin-film lithium niobate (TFLN) platform present a promising approach to address the burgeoning global data traffic demands. As a pivotal component, TFLN-based electro-optic (EO)…
Optical metasurfaces, consisting of subwavelength-scale meta-atom arrays, hold great promise to overcome fundamental limitations of conventional optics. Scalable nanomanufacturing of metasurfaces with high uniformity and reproducibility is…
Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density.…
This report is a brief review of the recent work on architectures for the prospective hybrid CMOS/nanowire/ nanodevice ("CMOL") circuits including digital memories, reconfigurable Boolean-logic circuits, and mixed-signal neuromorphic…
Compared to the well studied two-dimensional (2D) ferroelectricity, much rare is the appearance of 2D antiferroelectricity, where local dipoles from the nonequivalent sublattices within 2D monolayers are oppositely orientated. Using NbOCl2…
In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy…
Two-dimensional type-II topological semimetals (TSMs), characterized by strongly tilted Dirac cones, have attracted intense interest for their unconventional electronic properties and exotic transport behaviors. However, rational design…
Thermally aware design of 2.5D and 3D advanced packaging systems will require fast, accurate, and powerful thermal analysis of chiplets, stacks, and packages. These systems contain multiple materials with non-linear heat transfer properties…
Electronically reprogrammable photonic circuits based on phase-change chalcogenides present an avenue to resolve the von-Neumann bottleneck; however, implementation of such hybrid photonic-electronic processing has not achieved…
TiO2 ferroelectric field effect transistors (FeFETs) with HfZrO2 (HZO) ferroelectric dielectric layers and bottom gate topology are fabricated for applications in neuromorphic systems. Two sets of devices are fabricated with different gate…
Combinatorial optimization problems (COPs) are crucial in many applications but are computationally demanding. Traditional Ising annealers address COPs by directly converting them into Ising models (known as direct-E transformation) and…
Ferromagnetic electrodes chemically bonded with thiol functionalized molecules can produce novel molecular spintronics devices. However, major challenges lie in developing Ferromagnetic electrodes based commercially viable device…