Related papers: Simulation study of short channel effects in junct…
A compact model for the effect of parasitic internal fringe capacitance on threshold voltage in high-K gate dielectric SOI MOSFETs is developed. Our model includes the effects of the gate dielectric permittivity, spacer oxide permittivity,…
In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate…
We use combine high resolution neutron diffraction (HRPD) with density functional theory (DFT) to investigate the exchange striction at the Curie temperature (TC) of Fe2P and to examine the effect of boron and carbon doping on the P site.…
Negative longitudinal magnetoresistance, in the presence of an external magnetic field parallel to the direction of an applied current, has recently been experimentally verified in Weyl semimetals and topological insulators in the bulk…
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…
The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of…
One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMD) is the strong spin-orbit interaction, which makes them very promising for future applications in…
We consider the charge and spin effects in low dimensional superconducting weak links. The first part of the review deals with the effects of electron-electron interaction in Superconductor/Luttinger liquid/Superconductor junctions. The…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
The existence of conserved spin Hall currents is shown in a strongly correlated system without involving spin-orbit coupling. The spin Hall conductivity is determined by intrinsic bulk properties, which remains finite even when the charge…
Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained Si/ Si1-xGex MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility…
Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional (2-D) materials monolayer HfS2 and phosphorene are explored through quantum transport simulations. We…
Electrical resistivities can be different for charge currents travelling parallel or perpendicular to the magnetization in magnetically ordered conductors or semiconductors, resulting in the well-known planar Hall effect and anisotropic…
Fully depleted (FD) Silicon on Insulator (SOI) metal oxide Field Effect Transistor (MOSFET) Is the Leading Contender for Sun 65nm Regime. This paper presents a study of effects of work functions of metal gate on the performance of FD-SOI…
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…
A realistic magnetic dipole has complex effects on a charged particle near the entrance and exit of the magnet, even with a constant and uniform magnetic field deep within the interior of the magnet. To satisfy Maxwell's equations, the…
We analyze non-equilibrium current transport in molecular electronic devices, using as an example devices formed by two terphenyl dithiol molecules attached to gold electrodes. Using a first-principles based self-consistent matrix Green's…
We report results of a magneto-transport study on thin films of the topological semi-metal candidate PdSb$_{2}$ (PS). We observe a positive correction to magneto-conductivity at low temperatures, which is a signature of weak…
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…
We present the results of our calculation of the effects of dynamical coupling of a charge-carrier to the electronic polarization and the field-induced lattice displacements at the gate-interface of an organic field-effect transistor…