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In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon…
Recently, Trepte et al. [J. Chem. Phys., vol. 155, 2021] pointed out the importance of analyzing dipole moments in the Fermi-L\"owdin orbital (FLO) self-interaction correction (SIC) for cyclic, planar molecules. In this manuscript, the…
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…
A 2D quantum ballistic transport model based on the non-equilibrium Green's function formalism has been used to theoretically investigate the effects induced by an oxide crenel in a very short (7 nm) thin-film…
Ballistic spin transport, through periodically stubbed waveguides, is studied in the presence of a weak spin-orbit interaction (SOI) and the resulting subband mixing. By an appropriate choice of the waveguide length and of the stub…
Three-dimensional Hopf insulators are a class of topological phases beyond the tenfold-way classification. The critical point separating two rotation-invariant Hopf insulator phases with distinct Hopf invariants is quite different from the…
We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single…
By means of computer simulation, we examined effect of dispersity of filler length on electrical conductivity of two-dimensional (2D) composites with rod-like fillers. Continuous approach has been used. Highly conductive zero-width rod-like…
We have used the electric--field effect to modulate the resistivity of the surface of underdoped Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films, allowing opposite modifications of the electron and hole density in the CuO$_2$ planes, an…
We analyze the consequences resulting from the asymmetric boundary conditions imposed by a non-uniform external magnetic field at the extremities of a planar Josephson tunnel junction and predict a number of testable signatures. When the…
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
The CV measurements and tunneling spectroscopy are used to study the ballistic transport of the spin-polarized holes by varying the value of the Rashba spin-orbit interaction (SOI) in the p-type quantum well prepared on the surface of the…
We have studied the finite bias transport properties of a 2H-1T' MoS$_2$ lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
Dual-gate electrostatic modulation gives an attractive approach for transistors performance improvement, threshold voltage (Vth) and operation mode modulation, which is favorable for chemical sensor and logic applications. Here, a…
We improvise a novel approach to carry out first-principles simulations of graphene-based vertical field effect tunneling transistors that consist of a graphene$|${\it h}-BN$|$graphene multilayer structure. Within the density functional…
We show that when a molecular junction is under an external bias, its properties can not be uniquely determined by the total electron density in the same manner as the density functional theory (DFT) for ground state (GS) properties. In…
Intrinsically broken symmetries in the bulk of topological insulators (TIs) are manifested in their surface states. In spite of particle-hole asymmetry in TIs, it has often been assumed that their surface states are characterized by a…
We theoretically study the current-driven domain wall motion in the presence of both the spin Hall effect and an extrinsic pinning potential. The spin Hall effect mainly affects the damping ratio of the domain wall precession in the pinning…