Improvement of current-control induced by oxide crenel in very short field-effect-transistor
Other Condensed Matter
2009-11-11 v1
Abstract
A 2D quantum ballistic transport model based on the non-equilibrium Green's function formalism has been used to theoretically investigate the effects induced by an oxide crenel in a very short (7 nm) thin-film metal-oxide-semiconductor-field-effect-transistor. Our investigation shows that a well adjusted crenel permits an improvement of on-off current ratio Ion/Ioff of about 244% with no detrimental change in the drive current Ion. This remarkable result is explained by a nontrivial influence of crenel on conduction band-structure in thin-film. Therefore a well optimized crenel seems to be a good solution to have a much better control of short channel effects in transistor where the transport has a strong quantum behavior.
Keywords
Cite
@article{arxiv.cond-mat/0503556,
title = {Improvement of current-control induced by oxide crenel in very short field-effect-transistor},
author = {Nicolas Cavassilas and Marc Bescond and Jean-Luc Autran},
journal= {arXiv preprint arXiv:cond-mat/0503556},
year = {2009}
}