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By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…

Mesoscale and Nanoscale Physics · Physics 2014-04-03 Viet Hung Nguyen , Huy Viet Nguyen , Philippe Dollfus

In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective model for the device current. Device simulation has been…

Mesoscale and Nanoscale Physics · Physics 2020-06-14 Ehsanur Rahman , Abir Shadman , Sudipta Romen Biswas , Kanak Datta , Quazi D. M. Khosru

Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…

Mesoscale and Nanoscale Physics · Physics 2011-10-31 Kartik Ganapathi , Youngki Yoon , Sayeef Salahuddin

Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces…

Mesoscale and Nanoscale Physics · Physics 2008-04-10 D. Basu , M. J. Gilbert , L. F. Register , A. H. MacDonald , S. K. Banerjee

III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current. Their 3D quantum transport study using non-equilibrium Green's…

Mesoscale and Nanoscale Physics · Physics 2016-10-04 Jun Z. Huang , Lining Zhang , Pengyu Long , Michael Povolotskyi , Gerhard Klimeck

A real-space quantum transport simulator for carbon nanoribbon (CNR) MOSFETs has been developed. Using this simulator, the performance of carbon nanoribbon (CNR) MOSFETs is examined in the ballistic limit. The impact of quantum effects on…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Gengchiau Liang , Neophytos Neophytou , Mark S. Lundstrom , Dmitri E. Nikonov

Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations,…

Materials Science · Physics 2013-02-15 Ignacio Gutiérrez Lezama , Alberto F. Morpurgo

The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the non-equilibrium Green's function formalism. The minimal…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Youngki Yoon , Jing Guo

The scattering effects are studied in nanometer-scaled double-gate MOSFET, using Monte Carlo simulation. The non-equilibrium transport in the channel is analyzed with the help of the spectroscopy of the number of scatterings experienced by…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 J. Saint Martin , A. Bournel , P. Dollfus

Using the tight-binding model and the generalized Green's function formalism, the effect of quantum interference on the electron transport through the benzene molecule in a semiconductor/benzene/semiconductor junction is numerically…

Mesoscale and Nanoscale Physics · Physics 2016-08-09 Javad Vahedi , Zahra Sartipi

The interplay between uniaxial strain and charging effects in zigzag graphene nanoribbons (ZGNR) is investigated by using non-equilibrium Green's function formalism. The I-V characteristic curves and especially negative differential…

Mesoscale and Nanoscale Physics · Physics 2019-12-05 Maliheh Azadparvar , Hosein Cheraghchi

For applications making use of magnonic spin currents damping effects, which decrease the spin conductivity, have to be minimized. We here investigate the magnon transport in an yttrium iron garnet thin film with strongly reduced effective…

Mesoscale and Nanoscale Physics · Physics 2021-12-08 Janine Gückelhorn , Tobias Wimmer , Manuel Müller , Stephan Geprägs , Hans Hübl , Rudolf Gross , Matthias Althammer

Electronic current in a nanometer-size rod is theoretically investigated by an eigen-channel decomposition method in nonequilibrium Green's function formalism. Physical properties, such as the local density of electrons and local current,…

Mesoscale and Nanoscale Physics · Physics 2009-01-30 Hiroshi Shinaoka , Takeo Hoshi , Takeo Fujiwara

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…

Materials Science · Physics 2026-04-22 Chankeun Yoon , Juhan Ahn , Yuchen Zhou , Jaydeep P. Kulkarni , Ananth Dodabalapur

A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…

Mesoscale and Nanoscale Physics · Physics 2013-07-17 Young I. Jhon , Myung S. Jhon

In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…

Biological ion channels balance electrostatic and dehydration effects to yield large ion selectivities alongside high transport rates. These macromolecular systems are often interrogated through point mutations of their pore domain,…

Mesoscale and Nanoscale Physics · Physics 2019-07-19 Subin Sahu , Justin Elenewski , Christoph Rohmann , Michael Zwolak

We analyze non-equilibrium current transport in molecular electronic devices, using as an example devices formed by two terphenyl dithiol molecules attached to gold electrodes. Using a first-principles based self-consistent matrix Green's…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Yongqiang Xue , Mark A. Ratner

We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the…

Materials Science · Physics 2015-05-14 M. Sirena , A. Zimmers , N. Haberkorn , E. Kaul , L. B. Steren , J. Lesueur , T. Wolf , Y. Le Gall , J. -J. Grob , G. Faini

We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the…

Materials Science · Physics 2009-12-21 Wolfgang L. Kalb , Kurt Mattenberger , Bertram Batlogg
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