Related papers: Dopant concentration effects on Si$_{1-x}$Ge$_{x}$…
Resistivity, Hall effect and magnetoresistance have been investigated systematically on single crystals of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ ranging from undoped to optimally doped regions. A systematic evolution of the quasiparticle scattering…
The effect of dopants on the metallic glass forming ability is usually considered based on analysis of changes in the liquid structure or thermodynamics. What is missing in such considerations is an analysis of how a dopant changes the…
Glasses usually represent the lower limit for the thermal conductivity of solids, but a fundamental understanding of lattice heat transport in amorphous materials can provide design rules to beat such a limit. Here we investigate the role…
Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of Ge-doped AlGaN samples with Al mole fraction from…
The dependence of the superconducting gaps in epitaxial Ba(Fe_{1-x}Co_{x})_2As_2 thin films on the nominal doping x (0.04 \leq x \leq 0.15) was studied by means of point-contact Andreev-reflection spectroscopy. The normalized conductance…
FeGa$_3$ is an unusual intermetallic semiconductor that presents intriguing magnetic responses to the tuning of its electronic properties. When doped with Ge, the system evolves from diamagnetic to paramagnetic to ferromagnetic ground…
The electrical, magnetic, thermal and optical characteristics of Gallium (Ga) doped silicene are investigated using density functional theory (DFT). The effect of doping is studied by tuning dopant concentrations as well as examining varied…
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline…
The effects of rhenium doping in the range 0 to 10 atomic percent on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations…
Effect of L-threonine (LT) doping on crystalline perfection, second harmonic generation (SHG) efficiency, optical transparency and laser damage threshold (LDT) in potassium dihydrogen phosphate (KDP) crystals grown by slow evaporation…
We present specific heat measurements on a series of BaFe2(As1-xPx)2 single crystals with phosphorous doping ranging from x = 0.3 to 0.55. Our results reveal that BaFe2(As1-xPx)2 follows the scaling Delta_C/Tc ~ Tc^2 remarkably well. The…
Recent superconducting transition temperatures (Tc) over 100 K for monolayer FeSe on SrTiO3 have renewed interest in the bulk parent compound. In KCl:AlCl3 flux-transport-grown crystals of FeSe0.94Be0.06, FeSe0.97Be0.03 and, for comparison,…
In FeSe-derived superconductors, the lack of a systematic and clean control on the carrier concentration prevents the comprehensive understanding on the phase diagram and the interplay between different phases. Here by K dosing and angle…
Ab initio molecular dynamics simulation is used to study the structure and electronic properties of the liquid Ga-Se system at the three compositions Ga$_2$Se, GaSe and Ga$_2$Se$_3$, and of the GaSe and Ga$_2$Se$_3$ crystals. The calculated…
Low temperature specific heat has been measured in optimally doped and highly overdoped non-superconducting BaFe$_{2-x}$TM$_x$As$_{2}$ ($TM$ = Co and Ni) single crystals. By using the data of the overdoped samples, we successfully removed…
Rare-earth ions doped crystals are of great significance for micro-sensing and quantum information, whilst the ions in the crystals emit light with spontaneous partial polarization, which is, though believed to be originated from the…
Detailed doping dependence of the electronic specific heat coefficient gamma is studied for La2-xSrxCuO4 (LSCO) single crystals in the slightly-doped regime. We find that gamma systematically increases with doping, and furthermore, even for…
We investigated the thermal stability of scintillation and the luminescence performances of (La, Gd)${}_{2}$Si${}_{2}$O${}_{7}$ single crystals at various Ce concentrations. We prepared (La${}_{0.25-x}$, Ce${}_{x}$,…
We study the structural, dynamical and electronic properties of amorphous Si\sub{1-x}Ge\sub{x}:H alloys using first principles local basis molecular dynamics simulation. The network topology and defects in the amorphous network have been…
Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are required. Ge is a promising alternative n-type dopant with an…