Related papers: Dopant concentration effects on Si$_{1-x}$Ge$_{x}$…
Germanium single crystal having 45 mm diameter and 100 mm length of 7N+ purity has been grown by Czochralski method. Structural quality of the crystal has been characterized by Laue diffraction. Electrical conduction and Hall measurements…
An eutectic LiCl/KCl flux method in a horizontal configuration has been used to grow a series of homogeneous Fe$_{1+\delta}$Se$_{1-x}$Te$_x$ single crystals of high quality with 0.5 $\leq$ $x$ $\leq$ 1. Compared with previously used…
In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe tomography. An almost uniform dopant distribution with…
Using a radio frequency tunnel diode oscillator technique, we measured the temperature dependence of the in-plane London penetration depth $\Delta\lambda_{ab}(T)$ in Fe$_{1+y}$(Te$_{1-x}$Se$_{x})$ single crystals, down to temperatures as…
The theoretical analysis of the process of diffusion of interstitial oxygen atoms and hydrogen molecules in silicon and germanium crystals has been performed. The calculated values of the activation energy and pre-exponential factor for an…
The impact of Ge vacancies on the low-temperature lattice dynamics of single-crystalline GeTe was investigated through a comparative study of two off-stoichiometric samples: Ge$_{0.8}$Te (S$_1$) and Ge$_{0.88}$Te (S$_2$). X-ray diffraction…
We present a highly efficient molecular dynamics scheme for calculating the concentration depth profile of dopants in ion irradiated materials. The scheme incorporates several methods for reducing the computational overhead, plus a rare…
We report on the critical current density Jc and the vortex dynamics of pristine and 3 MeV proton irradiated (cumulative dose equal to 2x10^16 cm^-2) $\beta$-FeSe single crystals. We also analyze a remarkable dependence of the…
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer…
Carrier dynamics in amorphous a-Si$_{1-x}$RE$_{x}$ (RE=Gd, Y) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy. Optical constants throughout the entire intra-gap region…
The structure of Nd$_{1-x}$Pb$_{x}$MnO$_{3}$ crystals is determined by single crystal X-ray diffraction. Substitution of Pb at the Nd site results in structural phase change from tetragonal (x = 0.25) to cubic (x = 0.37). These changes are…
The Y1-xLixBa2Cu3O7-d polycrystalline bulk superconductors doped with Li substituting at the Y site at different concentrations (x = 0, 0.01, 0.02, 0.1) were prepared using the citrate-gel method to study the effects of doping on the…
The dynamics of interstitial dopants governs the properties of a wide variety of doped crystalline materials. To describe the hopping dynamics of such interstitial impurities, classical approaches often assume that dopant particles do not…
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$…
We compare the magnitudes of the single-particle relaxation time accurately computed by the variable phase approach are with those computed in the first Born approximation for doped semiconductors such as Si and GaAs, assuming that the…
Resistivity measurements have been made on Mn$_{1-x}$Fe$_x$Si single crystals between 2 and 300K for $x$ = 0, 0.05, 0.08, 0.12 and 0.15. Fe doping is found to depress the magnetic ordering temperature from 30K for $x$ = 0 to below 2K for…
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitrogen doping in the range of 6.5e15/cm3 to 9.3e18/cm3, showing a…
It is experimentally shown, that doping an organic molecular crystal reduces diffusion rate of impurity. Also reduces its influence on a modification of temperature. Examinations are lead on a crystal paradibromobenzene doping by…
Cd1-xZnxTe crystals with x in the range of 0.1-0.2 were grown by the high-pressure vertical Bridgman method from pre-synthesized CZT. Resistive graphite heaters were used to control the temperature profiles within the furnaces, and an argon…
The effect of Co doping on supercoductivity of FeSe$_{0.4}$Te$_{0.6}$ single crystals is investigated. The superconducting transition temperature decreases linearly for Co doping with the rate -0.75 K/(Co %). On the other hand, the residual…