Related papers: Dopant concentration effects on Si$_{1-x}$Ge$_{x}$…
Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) has been widely used as a popular phase change material. In this study, we show that it exhibits high Seebeck coefficients 200 - 300 $\mu$V/K in its cubic crystalline phase ($\it{c}$-GST) at remarkably high…
Moving crystal surfaces can undergo step-bunching instabilities, when subject to an electric current. We show analytically that an infinitesimal quantity of a dopant may invert the stability, whatever the sign of the current. Our study is…
We have characterized in depth the time response of three detectors equipped with cylindrical LaBr$_{3}$ (Ce) crystals with dimensions of 1-in. in height and 1-in. in diameter, and having nominal Ce doping concentration of 5%, 8% and 10%.…
The electrocaloric effect (ECE) in BaTiO3 is simulated using two different first-principles based effective Hamiltonian molecular dynamics methods. The calculations are performed for a wide range of temperatures (30--900 K) and external…
Recent scanning tunneling microscopy studies have shown that local nanoscale pairing inhomogenities are correlated with interstitial oxygen dopants in Bi-2212. Combining electrostatic and cluster calculations, in this paper the impact of a…
Over the last few years, group IV hexagonal-diamond type crystals have acquired great attention in semiconductor physics thanks to the appearance of novel and very effective growth methods. However, many questions remain unaddressed on…
Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization…
Measurements of magneto-resistivity and magnetic susceptibility were performed on single crystals of superconducting Ba(Fe$_{0.9}$Co$_{0.1}$)$_{2}$As$_{2}$ close to the conditions of optimal doping. The high quality of the investigated…
We report the successful synthesis of FeSe$_{1-x}$S$_{x}$ single crystals with $x$ ranging from 0 to 1 via a hydrothermal method. A complete phase diagram of FeSe$_{1-x}$S$_{x}$ has been obtained based on resistivity and magnetization…
Solid-state refrigeration technology based on caloric effects are promising to replace the currently used vapor compression cycles. However, their application is restricted due to limited performances of caloric materials. Here, we have…
The crystal structure of barium-germanium clathrate Ba6Ge25 was studied using neutron powder diffraction in the temperature range 20-300K. The compound was found to be cubic (S.G. P4_1 23) in the entire temperature range. However, the…
We study hydrogen doping effects in an iron-based superconductor LaFeAsO_(1-y) by using the first-principles calculation and explore the reason why the superconducting transition temperature is remarkably enhanced by the hydrogen doping.…
A direct numerical simulation of many interacting ions in a Penning trap with a rotating wall is presented. The ion dynamics is modelled classically. Both axial and planar Doppler laser cooling are modeled using stochastic momentum impulses…
Isothermal-isobaric molecular dynamics simulations have been performed to examine a broad set of properties of the model water-1,2-dimethoxyethane (DME) mixture as a function of composition. The SPC-E and TIP4P-Ew water models and the…
Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and,…
We report resistivity as well as the Hall, Seebeck and Nernst coefficients data for Fe{1+d}Te{1-x}Se{x} single crystals with x = 0, 0.38, and 0.40. In the parent compound Fe{1.04}Te we observe at Tn = 61 K a sudden change of all quantities…
Iron-arsenide superconductor Na$_{1-\delta}$FeAs is highly reactive with the environment. Due to the high mobility of Na ions, this reaction affects the entire bulk of the crystals and leads an to effective stoichiometry change. Here we use…
The structure of $\mathrm{Ge}_x\mathrm{Te}_{100-x}$ (x = 14.5, 18.7, 23.6) glasses prepared by twin roller quenching technique was investigated by neutron diffraction, X-ray diffraction and Ge-K-edge X-ray absorption spectroscopy…
The focus of this paper is the vanishing of the thermal expansion in certain diamond-like semiconductors. In silicon becomes zero at T = 122. K. In germanium the situation is less clear. Previous investigations show that in natural…
Using x-ray powder diffraction technique at various temperatures and applied magnetic fields, we have studied the magnetostructural properties of Ce(Fe0.95Si0.05)2. The x-ray diffraction data establish quantitative relationships between…