Related papers: Dopant concentration effects on Si$_{1-x}$Ge$_{x}$…
We study mechanisms of control of charge state and concentration of different point defects in doped insulating crystals. The approach is based on the density functional theory calculations. We apply it to the problem of obtaining of…
We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining…
We show theoretically that thermomechanical effects in dye-doped nematic liquid crystals when illuminated by laser beams, can become important and lead to molecular reorientation at intensities substantially lower than that needed for…
We have utilized neutron powder diffraction to probe the crystal structure of layered Na$_{x}$CoO$_{2}$ near the half doping composition of $x=$0.46 over the temperature range of 2 to 600K. Our measurements show evidence of a dynamic…
In the elastic scattering regime, probe position-averaged convergent beam electron diffraction (PACBED) patterns have proven robust for estimating specimen thickness and mistilt. Through simulation, we show that core-loss-filtered PACBED…
The morphology and the microscopic internal dynamics of a bidimensional gel formed by spontaneous aggregation of gold nanoparticles confined at the water surface are investigated by a suite of techniques, including grazing-incidence x-ray…
We report comprehensive synchrotron x-ray scattering and magnetic susceptibility studies of the doped spin-Peierls materials Cu_{1-x}Zn_xGeO_3 and CuGe_{1-y}Si_yO_3. Temperature versus dopant concentration phase diagrams are mapped out for…
We present a highly efficient molecular dynamics scheme for calculating the concentration profile of dopants implanted in group-IV alloy, and III-V zinc blende structure materials. Our program incorporates methods for reducing computational…
The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room…
We report on the synthesis and physical properties of FeSe$_{1-x}$Te$_x$ single crystals with a low Te content (x = 0.17, 0.21, 0.25), where the replacement of Se with Te partially suppresses superconductivity. Resistivity and Hall effect…
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion…
Sympathetic cooling of trapped ions has become an indispensable tool for quantum information processing and precision spectroscopy. In the simplest situation a single Doppler-cooled ion sympathetically cools another ion which typically has…
The in-plane London penetration depth, $\Delta\lambda(T)$, was measured using a tunnel diode resonator technique in single crystals of Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$ with doping levels $x$ ranging from heavily underdoped, $x$=0.16…
We studied the dynamics of a quasi-one-dimensional chain-like system of charged particles at low temperature, interacting through a screened Coulomb potential in the presence of a local constriction. The response of the system when an…
The Ce(1-x)LaxCrGe3 (x = 0, 0.19, 0.43, 0.58 and 1) intermetallic compound system has been investigated by magnetization measurements and neutron scattering techniques to determine the effect of La-doping on the magnetic ordering and…
We report on structural, magnetic, conductivity, and thermodynamic studies of FeSe$_{0.5}$Te$_{0.5}$ single crystals grown by self-flux and Bridgman methods. The samples were prepared from starting materials of different purity at various…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
We show that individual dopant atoms dominate the transport characteristics of nanometer sized devices, by investigating metal semiconductor diodes down to 15 nm diameter. Room temperature measurements reveal a strongly increasing scatter…
We show that oblique propagation of electrons in crystals of Ge and Si, where the electron velocity does not follow the electric field even on average, can be explained using standard anisotropic theory for indirect gap semiconductors.…
We investigated the superconducting and transport properties in FeTe$_{1-x}$Se$_{x}$ (0.1 $\leq$ $x$ $\leq$ 0.4) single crystals prepared by O$_2$-annealing. Sharp superconducting transition width observed in magnetization measurement and…