Related papers: Electrical 180o switching of N\'eel vector in spin…
Rotating the magnetization of a magnetostrictive nanomagnet with electrically generated mechanical strain dissipates miniscule amount of energy compared to any other rotation method and would have been the ideal method to write bits in…
In the development of spin-based electronic devices, a particular challenge is the manipulation of the magnetic state with high speed and low power consumption. Although research has focused on the current-induced spin-orbit torque based on…
We propose a fractionally quantized polarization induced by interlayer sliding in bilayer altermagnets, unveiling a previously unrecognized multiferroic phase termed sliding fractional quantum multiferroicity (SFQM). This unconventional…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
An antiferromagnetic semimetal has been recently identified as a new member of topological semimetals that may host three-dimensional symmetry-protected Dirac fermions. A reorientation of the N\'{e}el vector may break the underlying…
Electrical switching of antiferromagnets (AFM) is critical for AFM spintronics. However, electrical pulse-induced Neel vector reorientation in AFM insulators, while predicted to occur at much faster timescales than ferromagnetic switching,…
Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient…
Exchange bias effect plays a crucial role in modern magnetic memory technology. Recently, van der Waals magnetic materials have emerged and shown potential in spintronic devices at atomic scale. Owing to their tunable physical properties…
Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the…
Femtosecond laser control of antiferromagnetic order is a cornerstone for future memory and logic devices operating at terahertz clock rates. The advent of altermagnets -- antiferromagnets with unconventional spin-group symmetries --…
Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal…
Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid magnetization dynamics, as dictated by the geometric mean of…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
Altermagnets represent a novel magnetic phase with transformative potential for ultrafast spintronics, yet efficient control of their magnetic states remains challenging. We demonstrate an ultra-low-power electric-field control of…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
Magnetic skyrmions are localized magnetic structures that retain their shape and stability over time, thanks to their topological nature. Recent theoretical and experimental progress has laid the groundwork for understanding magnetic…
The realization of multiferroic altermagnets featuring giant intrinsic spin splitting, hold great promise for next-generation spintronics. In this work, based on the recently proposed concept of spin-antiferroelectric (spin-AFE), we…
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance.…
Transition metal molybdenum oxides A2Mo3O8 (A= Mn, Fe, Co) are known to be polar magnets where A ions are located in either octahedrally or tetrahedrally coordinated sites. In this paper we predict that their polarizations can be reversed…