Related papers: Electrical 180o switching of N\'eel vector in spin…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum…
We predict a supercurrent-driven N\'eel spin-orbit torque in a superconductor/$d$-wave altermagnet heterostructure, associated with the emergence of spin-triplet correlations. The effect can be understood as a consequence of the…
Antiferromagnets have attracted significant attention because of their considerable potential in engineering high-density and ultrafast memory devices, a crucial and increasingly demanded component of contemporary high-performance…
Spin-waves in antiferromagnets hold the prospects for the development of faster, less power-hungry electronics, as well as promising physics based on spin-superfluids and coherent magnon-condensates. For both these perspectives, addressing…
There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects.…
Electric-field switching of magnetic order is of significant physical interest and holds great potential for spintronic applications. However, it has rarely been reported in two-dimensional (2D) van der Waals (vdW) magnets due to the…
Antiferromagnetic (AFM) spintronics exploits the N\'eel vector as a state variable for novel spintronic devices. Recent studies have shown that the field-like and antidamping spin-orbit torques (SOT) can be used to switch the N\'eel vector…
Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Antiferromagnetic materials with spin splitting have attracted considerable attention for their symmetry-enabled anisotropic spin textures that sustain a zero net magnetization, thereby facilitating efficient spin-current generation. In…
The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn$_2$Au.…
Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we…
Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which has been diligently sought after for a long time. The two-dimensional (2D) vdW multiferroics is a more exciting endeavour. To…
As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the…
We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium N\'eel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on…
We present a comprehensive theoretical investigation of magnetoelectric (ME) coupling mechanisms in 19 altermagnetic and 4 ferrimagnetic Type-I multiferroics using electronic band structure calculations with spin-orbit coupling, a…
We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…
The search for novel spintronic devices brings about new ways to control switching in magnetic thin-films. In this work we experimentally demonstrate a device based on thermoelectrically controlled exchange coupling. The read out signal…
Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements, superconducting field-effect transistors (FETs), and gate-tunable qubits. Superconducting FETs operate through…