Related papers: Electrical 180o switching of N\'eel vector in spin…
Spintronics has advanced through discoveries of various electrically-driven spin dynamics in nanomagnets. Here, we report a novel switching dynamics of spin systems driven by spin-orbit torque, using a noncollinear antiferromagnetic…
The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We…
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which exploits the N\'eel vector to control the topological electronic states and the associated spin-dependent transport properties. A recently discovered…
Antiferromagnets have garnered significant attention due to their negligible stray field and ultrafast magnetic dynamics, which are promising for high-density and ultrafast spintronic applications. Their dual functionality as both spin…
Finding methods for the most efficient and fastest detection and control of magnetic domains in antiferromagnets is presently among the main challenges of magnetic research at large. We analyse the problem of optical read-out and control of…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
We propose a novel ferroelectric switchable altermagnetism effect, the reversal of ferroelectric polarization is coupled to the switching of altermagnetic spin splitting. We demonstrate the design principles for the ferroelectric…
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…
The controlled switching between two quasi-stable Neel states in adsorbed anti-ferromagnetic Fe chains has recently been achieved by Loth et al [Science 335, 196 (2012)]. In order to rationalize their data, we evaluate the rate of tunneling…
For a long time, there have been no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was…
We propose a spin valve that is based on van der Waals antiferromagnetism and fully electrically controlled. The device is composed of two antiferromagnetic terminals that allow for vertical bias control and a linked central scattering…
In this work, we introduce a new class of chiral altermagnetic magnetoelectrics in structurally chiral, nonpolar altermagnetic systems and identify the experimentally well-characterized three-dimensional metal-organic framework…
Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report…
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…
A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase…
Anisotropic magnetoresistance (AMR) offers a robust electrical readout of antiferromagnetic (AFM) states, playing a central role in the rapidly advancing field of AFM spintronics. Despite its great versatility, electrical probing of the…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the…