Related papers: Wafer-scale CMOS-compatible graphene Josephson fie…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
We report on an industry-grade CMOS-compatible qubit fabrication approach using a CMOS pilot line, enabling a yield of functional devices reaching 92.8 %, with a resistance spread evaluated across the full wafer 200 mm diameter of 12.4 %…
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…
We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$…
Superconductor digital electronics using Josephson junctions as ultrafast switches and magnetic-flux encoding of information was proposed over 30 years ago as a sub-terahertz clock frequency alternative to semiconductor electronics based on…
Magic-angle twisted bilayer graphene (MATBG) has recently emerged as a highly tunable two-dimensional (2D) material platform exhibiting a wide range of phases, such as metal, insulator, and superconductor states. Local electrostatic control…
A theoretical model of high-T_c Josephson Field Effect Transistors (JoFETs) based on a Ginzburg-Landau free energy expression whose parameters are field- and spatially- dependent is developed. This model is used to explain experimental data…
Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate to another desired substrate. This key step for device…
Josephson junction (JJ) is a key nonlinear element in superconducting devices such as qubits, amplifiers, and bolometers. Recently, gate-tunable JJs based on graphene and semiconductors have gained interest due to their rich Andreev physics…
Edge-contacted superconductor-graphene-superconductor Josephson junction have been utilized to realize topological superconductivity, which have shown superconducting signatures in the quantum Hall regime. We perform the first-principles…
The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene…
The interplay between superconductivity and ferromagnetism has long been pursued as a route to unconventional Josephson effects, yet suitable material platforms remain limited. Here we report Josephson junctions based on epitaxial…
The Josephson diode (JD) is a non-reciprocal circuit element that supports a larger critical current in one direction compared to the other. This effect has gained a growing interest because of promising applications in superconducting…
With the further scaling of silicon MOSFETs becoming increasingly harder, the search for an alternative material became crucial. The electron device community found many of the answers in two dimensional materials, especially graphene. With…
We have demonstrated a novel type of superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon (MET) potentially offers a smaller footprint and…
Recently, gate-defined Josephson junctions based on magic-angle twisted bilayer graphene (MATBG) have been fabricated. In such a junction, local electrostatic gating can create two superconducting regions connected by an interaction-driven…
This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field…
The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…
We study Josephson effect in graphene superconductor- barrier- superconductor junctions with short and wide barriers of thickness $d$ and width $L$, which can be created by applying a gate voltage $V_0$ across the barrier region. We show…
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…