Related papers: Wafer-scale CMOS-compatible graphene Josephson fie…
We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient, and allow us to modulate carrier density along either…
Low-loss inductors are essential components in various superconducting circuits, such as qubits or digital electronics. In this study, we investigate highly compact inductors formed by vertical stacking of Josephson junctions. Our…
We report the realization of multilayer three-dimensional nanobridge Josephson junctions based on Nb/NbN and Nb/TiN superconducting stacks fabricated using electron-beam lithography and chlorine-based dry etching. In this architecture, a…
We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a…
Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance…
Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the…
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…
News & Views on the graphene-based Josephson parametric amplifiers.
We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
We have constructed a new type of amplifier whose primary purpose is the readout of superconducting quantum bits. It is based on the transition of an RF-driven Josephson junction between two distinct oscillation states near a dynamical…
Josephson tunnel junctions form the basis for various superconducting electronic devices. For this reason, enormous efforts are routinely taken to establish and later on maintain a scalable and reproducible wafer-scale manufacturing process…
We report experimental results on characteristics of SFIFS junctions and multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS…
The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and…
The simultaneous co-existence and gate-tuneability of the superconducting (SC), magnetic and topological orders in magic angle twisted bilayer graphene (MATBG) open up entirely new possibilities for the creation of complex hybrid Josephson…
Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect transistor (TFET) formed from atomic precision vertical stacks of…
Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic…
One of the practical limitations of solid-state superconducting quantum processors technology is frequency crowding due to low qubits fabrication reproducibility. Josephson junction 100 nm-scale nonlinear inductance of the qubits still…
An amplifier combining noise performances as close as possible to the quantum limit with large bandwidth and high saturation power is highly desirable for many solid state quantum technologies such as high fidelity qubit readout or high…
In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid…