We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient, and allow us to modulate carrier density along either edge of the junction in a wide range. In particular, in magnetic fields in the 1−2 Tesla range, we are able to populate the next Landau level, resulting in Hall plateaus with conductance that differs from the bulk filling factor. When counter-propagating quantum Hall edge states are introduced along either edge, we observe supercurrent localized along that edge of the junction. Here we study these supercurrents as a function of magnetic field and carrier density.
@article{arxiv.1901.05928,
title = {Full control of quantum Hall supercurrent in a side gated graphene Josephson junction},
author = {Andrew Seredinski and Anne W. Draelos and Ethan G. Arnault and Ming-Tso Wei and Hengming Li and Kenji Watanabe and Takashi Taniguchi and Francois Amet and Gleb Finkelstein},
journal= {arXiv preprint arXiv:1901.05928},
year = {2019}
}