Related papers: Dipolar coupled core-shell perpendicular shape ani…
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the…
We conduct an exploration of the energy landscape of two coupled ferromagnetic layers with perpendicular-to-plane uniaxial anisotropy using finite-element micromagnetic simulations. These multilayers can be used to produce noncollinearity…
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential…
Graphical probabilistic circuit models of stochastic computing are more powerful than the predominant deep learning models, but also have more demanding requirements. For example, they require "programmable stochasticity", e.g. generating…
We study systems of classical magnetic dipoles on simple cubic lattices with dipolar and antiferromagnetic exchange interactions. By analysis and Monte Carlo (MC) simulations, we find how the antiferromagnetic phases vary with uniaxial and…
The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in…
The switching of a vortex core of a single disk in an array of a multilayer system is investigated by micromagnetic simulation. We found that the perpendicular uniaxial anisotropy (PUA) decreases the frequencies of the azimuthal mode in…
The tunneling magnetoresistance (TMR) of a hexagonal array of dipolar coupled anisotropic magnetic nanoparticles is studied using a resistor network model and a realistic micromagnetic configuration obtained by Monte Carlo simulations.…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
In crossbar array structures, which serves as an "In-Memory" compute engine for Artificial Intelligence hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar…
Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to…
We implement extensive computer simulations to investigate the hysteresis characteristics in the ordered arrays ($l^{}_x\times l^{}_y$) of magnetic nanoparticles as a function of aspect ratio $A^{}_r=l^{}_y/l^{}_x$, dipolar interaction…
Recently there is considerable interest to realize efficient and low-cost true random number generators (RNGs) for practical applications. One important way is through the use of bistable magnetic tunnel junctions (MTJs). Here we study the…
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is…
Amorphous Co-rich microwires with excellent soft magnetic and mechanical properties produced by melt-extraction technique are emerging as a multifunctional material for a variety of applications ranging from ultrasensitive magnetic field…
Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The…
Motivated in part by experiments performed by M.H. Pan et al. (nanoletters, v.5, p 83, 2005), we have undertaken a theoretical study of the the magnetic properties of two-monolayer thick Co nanoplatelets with an equilateral triangular…
We develop a theory of nonlinear low-magnetic-field magnetotransport on a helical edge of a quantum spin Hall insulator due to the edge state coupling to bulk midgap states. We focus on the part of the nonlinear I-V characteristic that is…
The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size…
Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…