Related papers: Dipolar coupled core-shell perpendicular shape ani…
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…
Long-range and anisotropic dipolar interactions profoundly modify the dynamics of particles hopping in a periodic lattice potential. We report the realization of a generalized t-J model with dipolar interactions using a system of ultracold…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…
Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy…
The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from the shape anisotropy of the…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
We present Monte Carlo simulations of the reversible transverse susceptibility (RTS) for a hexagonal array of dipolar interacting magnetic nanoparticles with random anisotropy. RTS curves with the bias-field in-plane and out-of-plane are…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
An attractive feature of magnetic adatoms and molecules for nanoscale applications is their superparamagnetism, the preferred alignment of their spin along an easy axis preventing undesired spin reversal. The underlying magnetic anisotropy…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
By Monte Carlo simulations in the canonical ensemble, we have studied the magnetic anisotropy in Fe/Dy amorphous multilayers. This work has been motivated by experimental results which show a clear correlation between the magnetic…
In this study, to obtain perpendicular magnetic tunnel junctions (p-MTJs) using half-metallic ferromagnets (HMFs), several methods were developed to induce perpendicular magnetic anisotropy (PMA) in full-Heusler Co2FeSi (CFS) alloy thin…
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the…