The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe3GeTe2 and WTe2. We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved by employing unconventional charge to z-spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z-spin to charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing.
@article{arxiv.2211.06610,
title = {Cascadable in-memory computing based on symmetric writing and read out},
author = {Lizheng Wang and Junlin Xiong and Bin Cheng and Yudi Dai and Fuyi Wang and Chen Pan and Tianjun Cao and Xiaowei Liu and Pengfei Wang and Moyu Chen and Shengnan Yan and Zenglin Liu and Jingjing Xiao and Xianghan Xu and Zhenlin Wang and Youguo Shi and Sang-Wook Cheong and Haijun Zhang and Shi-Jun Liang and Feng Miao},
journal= {arXiv preprint arXiv:2211.06610},
year = {2022}
}