Related papers: Sn whisker growth mitigation by using NiO sublayer…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
A detailed nanoscale structural characterization was performed on high-quality La0.66Sr0.33MnO3 (LSMO) thin films of different thicknesses and deposited by pulsed laser deposition onto buffered Si (100) substrates. A multilayered structure…
Ion implantation is an interesting method to dope semiconducting materials such as zinc oxide provided that the implantation-induced defects can be subsequently removed. Nitrogen implantation followed by anneals under O2 were carried out on…
Low energy alkali ion scattering is used to investigate the deposition of Au onto a single layer of graphene grown onto Ni(111) by chemical vapor deposition. The yield of 3.0 keV Na$^+$ singly scattered from Au as a function of coverage…
We study the underlying chemical, electronic and magnetic properties of a number of magnetite based thin films. The main focus is placed onto NiO/Fe$_3$O$_4$(001) bilayers grown on MgO(001) and Nb-SrTiO$_3$(001) substrates. We compare the…
Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of…
We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron…
Complex structures on a material surface can significantly reduce total secondary electron emission from that surface. A velvet is a surface that consists of an array of vertically standing whiskers. The reduction occurs due to the capture…
Si-doped GaN films were grown on $\textit{c}$-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N$_2$ in Ar-N2 growth atmosphere and their epitaxial character was ascertained by phi-scans. Energy…
Thin films of ZnO:SnO2 were deposited on different substrates like glass and c-Si using spray pyrolysis method .The structures and morphology of the prepared samples films were cheeked using X-ray diffraction and atomic force microscope.…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
We report the low temperature growth of vertically aligned ZnO nanocolumns on Si substrates by using reactive radio frequency magnetron sputtering.High sputtering pressure combined with low substrate temperatures induce a pronounced self…
Diffraction experiments with holographic gratings recorded in SiO$_2$ nanoparticle-polymer composites have been carried out with slow neutrons. The influence of parameters such as nanoparticle concentration, grating thickness and grating…
Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness ratio and by using an intermediate carbon buffer layer, that…
Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of…
Ni thin films grown by thermal evaporation and sputtering under different deposition conditions are characterized for structural and morphological properties using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. XRD…
A theoretical framework is developed to describe experiments on the structure of epitaxial thin films, particularly niobium on sapphire. We extend the hypothesis of dynamical scaling to apply to the structure of thin films from its…
Growth monitoring during the early stages of film formation is of prime importance to understand the growth process, the microstructure and thus the overall layer properties. In this work, we demonstrate that phonons can be used as…
Combining topological insulators (TIs) and magnetic materials in heterostructures is crucial for advancing spin-based electronics. Magnetic insulators (MIs) can be deposited on TIs using the spin-spray process, which is a unique non-vacuum,…
The oxidation of the Ni(111) surface is studied experimentally with low energy electron microscopy and theoretically by calculating the electron reflectivity for realistic models of the NiO/Ni(111) surface with an ab-initio scattering…