Thick GaN film stress-induced self-separation

Vladislav Voronenkov; Andrey Leonidov; Yuri Lelikov; Andrey Zubrilov; Yuri Shreter

doi:10.1109/EIConRus.2019.8657271

Thick GaN film stress-induced self-separation

Materials Science 2019-03-06 v2

Authors: Vladislav Voronenkov , Andrey Leonidov , Yuri Lelikov , Andrey Zubrilov , Yuri Shreter

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Abstract

Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness ratio and by using an intermediate carbon buffer layer, that reduced the binding energy between the GaN film and the substrate. Wafer-scale self-separation of thick GaN films has been demonstrated.

Keywords

thin film physics semiconductor nanowire growth

Cite

@article{arxiv.1902.03463,
  title  = {Thick GaN film stress-induced self-separation},
  author = {Vladislav Voronenkov and Andrey Leonidov and Yuri Lelikov and Andrey Zubrilov and Yuri Shreter},
  journal= {arXiv preprint arXiv:1902.03463},
  year   = {2019}
}

Comments

Published in Proceedings of the 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)

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