Related papers: Sn whisker growth mitigation by using NiO sublayer…
A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth…
The mid-infrared (mid-IR) wavelength regime offers several advantages for following the late-time evolution of supernovae (SNe). First, the peaks of the SN spectral energy distributions shift toward longer wavelengths following the…
Well-ordered ultrathin films of NiO have been prepared on an Ag(001) substrate using molecular beam epitaxy. With the help of angle-resolved two-photon photoemission (2PPE) a series of image potential states (IPS) for film thicknesses of…
Recently superconductivity at 9 - 15 K was discovered in an infinite-layer nickelate (Nd$_{0.8}$Sr$_{0.2}$NiO$_2$ films), which has received enormous attention. Since the $Ni^{1+}$ ionic state in NdNiO$_2$ may have the $3d^9$ outer-shell…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
Due to the lack of any magnetic order down to 1.7 K in the parent bulk compound NdNiO2, the recently discovered 9-15 K superconductivity in the infinite-layer Nd0.8Sr0.2NiO2 thin films has provided an exciting playground for unearthing new…
Magnetic coupling between Ni_{81}Fe_{19} double thin films separated by an insulating SiO_{2} spacer layer is investigated with structural measurements, cross sectional imaging, magnetization measurements (BH loop) and transport under the…
High quality ZnO thin films were gown using the pulsed laser deposition technique on (0001) Al$_2$O$_3$ substrates in an oxidizing atmosphere, using a Zn metallic target. We varied the growth conditions such as the deposition temperature…
The present study describes a facile route of zinc oxide (ZnO) grows using the solution-dependent electrostatic spray deposition (ESD) method at temperatures ranging from 300 {\deg}C - 500 {\deg}C. In this work, zinc chloride (ZnCl2) was…
We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent…
The use and the study of semi-insulating layers on metals and semiconductors surfaces have found continuous interest in the past decades. So far, the control of the sizes and growth location of the insulating islands on the substrate is…
In this study, the effect of Sr- and Ni-doping on microstructural, morphological and sensing properties of ZnO nanorods has been investigated. Nanorods with different Sr and Ni loadings were prepared using a simple wet chemical method and…
Reactive dual ion beam sputter deposition of AlN thin films was carried out for the analysis of surface growth characteristics by Atomic Force Microscopy. The variation of roughness as a function of deposition time was analysed by Dynamic…
Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which…
Early results on the plasma deposition of dielectric thin films on acoustic wave (AW) activated substrates revealed a densification pattern arisen from the focusing of plasma ions and their impact on specific areas of the piezoelectric…
The effects of 200-MeV Ag^{+15} ion irradiation on the optical properties of TiO_{2} and SnO_{2} thin films prepared by using the RF magnetron sputtering technique were investigated. These films were characterized by using UV-vis…
Ultrathin epitaxial films of EuNiO3 were grown on a series of substrates traversing highly compressive (- 2.4%) to highly tensile (2.5%) lattice mismatch. X-ray diffraction measurements showed the expected c-lattice parameter shift for…
ZnO is a promising material for the fabrication of light emitting devices. One approach to achieve this goal is to use ZnO nanorods because of their expected high crystalline and optical quality. Catalyst free growth of nanorods by…
InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing.…
The present study delves into exploring the impact of a thin protective layer of scandium nitride (ScN) on the superconductive properties of thin films of niobium nitride (NbN) generated through reactive magnetron deposition. This is the…