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Chalcogenide material-based integrated photonic devices have garnered widespread attention due to their unique wideband transparency. Despite their recognized CMOS compatibility, the fabrication of these devices relies predominantly on…
Metal oxide resists (MORs) have shown great promise for high resolution patterning in extreme ultraviolet (EUV) lithography, with potential for integration into high volume manufacturing. However, MORs have recently been shown to exhibit…
Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are however compromised by nm-scale edge roughness…
High-performance programmable silicon photonic circuits are considered to be a critical part of next generation architectures for optical processing, photonic quantum circuits and neural networks. Low-loss optical phase change materials…
Superconducting integrated circuit (SIC) is a promising "beyond-CMOS" device technology enables speed-of-light, nearly lossless communications to advance cryogenic (4 K or lower) computing. However, the lack of large-area superconducting IC…
Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping,…
Patterning the front side of an ultra-thin crystalline silicon (c Si) solar cell helps keeping the energy conversion efficiency high by compensating for the light absorption losses. A super-Gaussian mathematical expression was used in order…
Using a hydrodynamic approach we examine bulk- and surface-induced second and third harmonic generation from semiconductor nanowire gratings having a resonant nonlinearity in the absorption region. We demonstrate resonant, broadband and…
We use a state-of-the-art optimization algorithm combined with a careful methodology to find optimal anti-reflective coatings. Our results show that ultra thin structures (less than $300 \,nm$ thick) outperform much thicker gradual patterns…
We present results of a fabrication-process development for the lithographic pattern transfer into the sub-100nm range by combining electron-beam lithography and reactive dry etching to obtain high quality niobium-based light-sensitive…
We search for EUV brightenings in TRACE 171 {\AA} images and HXR bursts observed during failed eruptions. We expect that if an eruption is confined due to interaction with overlying magnetic structures then we should observe effects…
A simple and effective method to fabricate a high fill-factor triangular microlens array using the proximity printing in lithography process is reported. The technology utilizes the UV proximity printing by controlling a printing gap…
Near-field phase-shifting contact lithography is modeled to characterize electromagnetic absorption in a photoresist layer with one face in contact with a quartz binary phase-shift mask. The broadband ultraviolet illumination is represented…
We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5…
The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an…
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong…
Self-diffraction is a non-collinear four-wave mixing technique well-known in optics. We explore self-diffraction in the extreme ultraviolet (EUV) range, taking advantage of intense femtosecond EUV pulses produced by a free electron laser.…
A fundamental capability for any transmissive optical component is anti-reflection, yet this capability is challenging to achieve in a cost-efficient manner over longer infrared wavelengths. We demonstrate that Mie resonant nanophotonic…
Pieces of $n$-type silicon with 3.5 k$\Omega \cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have…
Complex polarization states of photon pairs are indispensable in various quantum technologies. Conventional methods for preparing desired two-photon polarization states are realized through bulky nonlinear crystals, which can restrict the…