Related papers: Resistless EUV lithography: photon-induced oxide p…
Broadband mid-infrared (mid-IR) spectroscopy applications could greatly benefit from today's well-developed, highly scalable silicon photonics technology; however, this platform lacks broadband transparency due to its reliance on absorptive…
The new generation of lithography tools use high energy EUV radiation which ionizes the present background gas due to photoionization. To predict and understand the long term impact on the highly delicate mirrors It is essential to…
Grayscale lithography allows the creation of micrometer-scale features with spatially-controlled height in a process that is fully compatible with standard lithography. Here, solid immersion lenses are demonstrated in silicon carbide using…
A new tool providing material contrast control in scanning electron microscopy (SEM) is demonstrated. The approach is based on deep-UV illumination during SEM imaging and delivers a novel material based contrast as well as higher resolution…
Thin films of functional inorganic materials, particularly oxides, play a vital role in optoelectronics, enabling applications that range from active optical components to MEMS-based architectures. Achieving high aspect ratio patterning of…
High-resolution extreme ultraviolet (XUV) imaging remains limited by conventional approaches that require complex optics such as multilayer mirrors and zone plates. These methods are expensive, suffer from chromatic aberrations and narrow…
The rise of micro/nanooptics and lab-on-chip devices demands the fabrication of three-dimensional structures with decent resolution. Here, we demonstrate the combination of grayscale electron beam lithography and direct forming methodology…
Next-generation nano and quantum devices have increasingly complex 3D structure. As the dimensions of these devices shrink to the nanoscale, their performance is often governed by interface quality or precise chemical or dopant composition.…
Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 ohm.cm and 0.02 ohm.cm) in hydrofluoric (HF) acid of 24.5 precent…
This work addresses the fabrication of transparent glass surfaces with superior water-repellence (i.e., superhydrophobicity), and related functional properties such as omniphobicity, anti-fogging and anti-icing responses. Surfaces have been…
We adapted a conventional microscope for projection photolithography using an ultraviolet (UV) light-emitting diode (LED) as a light source. The use of a UV LED provides the microscope projector with several advantages in terms of…
Nanoimprint lithography (NIL) is an attractive nonconventional lithographic technique in the fabrication of superconducting nanowires for superconducting nanowire single-photon detectors (SNSPDs) with large effective detection areas or…
A comparison of the performance of high resolution lithographic tools is presented here. We use extreme ultraviolet interference lithography, electron beam lithography, and He ion beam lithography tools on two different resists that are…
Mo-Si multilayer mirrors are central to extreme ultraviolet lithography, where nanoscale optical interference and heat accumulation together constrain reflectivity and operational stability. Here we develop an analytical…
The paper reports on the comparison of the wetting properties of super-hydrophobic silicon nanowires (NWs), using drop impact impalement and electrowetting (EW) experiments. A correlation between the resistance to impalement on both EW and…
Periodic or gradient subwavelength structures are basic configurations of photonic crystals and metamaterials. While the numerical simulations predict trivial loss, but the fabricated photonic crystal waveguides by E-beam lithography and…
Metasurfaces with spatially varying subwavelength structures enable full control of electromagnetic waves over a wide spectrum. High-efficiency metasurfaces, especially in a transmission mode, are of practical significance in optical…
One-photon or two photon absorption by dye molecules in photopolymers enable direct 2D & 3D lithography of micro/nano structures with high spatial resolution and can be used effectively in fabricating artificially structured nanomaterials.…
Group III-V semiconductor materials are being considered as a Si replacement for advanced logic devices for quite some time. Advances in III-V processing technologies, such as interface and surface passivation, large area deep submicron…
In this paper we describe a way to achieve the extraordinary transmission regime from sub-wavelength slits carved on semiconductor substrates. Unlike metals, the dielectric permittivity of typical semiconductors like GaAs or GaP is negative…