Related papers: Resistless EUV lithography: photon-induced oxide p…
Using the illuminator for high numerical aperture (NA) extreme ultraviolet (EUV) exposure tool in EUV lithography can lead to support volume production of sub-2 nm logic nodes and leading-edge DRAM nodes. However, the typical design method…
The rapid development of coherent short-wavelength light sources in the extreme ultraviolet (EUV) and soft X-ray (SXR) regimes has created a growing need for advanced optoelectronic detection capabilities, particularly for…
Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of…
Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production…
Next generation EUV sources for photolithography use light produced by laser-produced plasmas (LPP) from ablated tin droplets. A major challenge for extending the lifetime of these devices is mitigating damage caused by deposition of tin…
The present work illustrates a novel approach for the maskless and resistless fabrication of nanopatterned metal layers on Si substrates, based on the combination of nanomechanical surface modification techniques (such as nanoindentation…
Since the pioneering work of S.Y. Chou et al.[1] Nano Imprint Lithography (NIL) has emerged as a promising technique for surface patterning, opening for numerous applications ranging from nanophotonics[2] to microfluidics[3]. NIL basically…
High-resolution patterning of periodic structures over large areas has several applications in science and technology. One such method, based on the long-known Talbot effect observed with diffraction gratings, is achromatic Talbot…
The concept of metasurfaces was recently applied to the extreme ultraviolet (EUV) spectral regime, providing a new opportunity for transmissive focusing elements in a regime where materials are highly lossy. The realization of metalenses in…
Spectral measurements play a vital role in understanding laser-plasma interactions. The ability to accurately measure the spectrum of radiation sources is crucial for unraveling the underlying physics. In this article, we introduce a novel…
Light trapping photonic crystal (PhC) patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%, for light-to-electrical power conversion with a single junction cell. This…
Extreme ultraviolet (EUV) coherent sources below 120nm are of paramount significance for promoting next-generation nano-scale lithography,precision spectroscopy, and exploring the emerging physical phenomena in quantum materials. Nonlinear…
In this paper, we demonstrate strip-loaded guiding optical components realized on a 27 nm ultra-thin SOI platform. The absence of physically etched boundaries within the guiding core suppresses majorly the scattering loss, as shown by us…
Meta-optics, the application of metasurfaces into optical systems, is seeing an accelerating development owing to advantages in size, weight and cost and the ability to program optical functions beyond traditional refractive optics. The…
Qubit information processors are increasing in footprint but currently rely on e-beam lithography for patterning the required Josephson junctions (JJs). Advanced optical lithography is an alternative patterning method, and we report on the…
We study extreme ultraviolet (EUV) radiation induced defects in single-layer graphene. Two mechanisms for inducing defects in graphene were separately investigated: photon induced chemical reactions between graphene and background residual…
In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is…
A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped…
Miniaturizing nonlinear optical components is essential for integrating advanced light manipulation into compact photonic devices, enabling scalable and cost-effective applications. While monocrystalline lithium niobate thin films advance…
In this study, we developed a UV-tape-assisted laser patterning (UT-Laser) technique that enables the simple transfer-based formation of wiring with line widths below 200 $\mu$m onto textile substrates. With the rapid advancement of…