Related papers: Resistless EUV lithography: photon-induced oxide p…
Fabrication of X-ray gratings has surged in the last two decades thanks to their vast employment in X-ray Phase Contrast Imaging, an imaging technique able to boost X-ray sensitivity to detect otherwise invisible details. These high aspect…
We introduce an in-situ characterization method of resists used for e-beam lithography. The technique is based on the application of an atomic force microscope which is directly mounted below the cathode of an electron-beam lithography…
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…
We present a theoretical evaluation of radiation dose constraints for extreme ultraviolet (EUV) and soft X-ray microscopy. Our work particularly addresses the long-standing concern regarding strong absorption of EUV radiation in biological…
Patterning of diamond-like carbon (DLC) and DLC:metal nanocomposites is of interest for an increasing number of applications. We demonstrate a nanoimprint lithography process based on silicon containing thermoplastic resist combined with…
Deep Ultraviolet (DUV) Photolithography is currently used to fabricate mass-scale integrated circuits (ICs). Its high throughput and resolution could benefit large-scale RF MEMS production for the telecommunication market. We present a…
Modern grating manufacturing techniques suffer from inherent issues that limit their peak efficiencies. The anisotropic etching of silicon facilitates the creation of custom gratings that have sharp and atomically smooth facets, directly…
A systematic review, covering fabrication of nanoscale patterns by laser interference lithography (LIL) and their applications for optical devices are provided. LIL is a patterning method with simple, quick process over a large area without…
We report on mask-less, high resolution etching of diamond surfaces, featuring sizes down to 10 nm. We use a scanning electron microscope (SEM) together with water vapor, which was injected by a needle directly onto the sample surface.…
In this paper, a method for solving the initial structure of an off-axis multi-mirror system applied to extreme ultraviolet (EUV) lithography using a paraxial ray-tracing algorithm based on Seidel aberration theory is proposed. By tracing…
In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is shaped and…
The ability to engineer localized surface plasmon resonances at large scale usually relies on precise nanoscale patterning. Here, we demonstrate that mid-infrared plasmonic responses can instead emerge in unpatterned polysilicon films…
We present here a novel resist formulation with active thiol groups at the surface. The material is UV curable, and can be patterned at the micro- and nanoscale by UV nanoimprint lithography. The resist formulation development, its…
Extreme ultraviolet (EUV) scatterometry is an increasingly important metrology that can measure critical parameters of periodic nanostructured materials in a fast, accurate, and repeatable manner and with high sensitivity to nanoscale…
Limited by the cost and complexity, superresolution lithography is hard to achieve through the traditional interference lithography. We here developed the plasmonic interference lithography technique by using a hyperbolic metamaterials…
Maintaining the highest quality and output of photon science in the VUV-, EUV-, soft- and tender-X-ray energy ranges requires high-quality blazed profile gratings. Currently, their availability is critical due to technological challenges…
The importance of a photon source that would be compatible with silicon circuitry is crucial for data communication networks. A photon source with energies ranging from UV to near infrared can be activated in Si as originationg from defects…
The most direct definition of a patterning process' resolution is the smallest half-pitch feature it is capable of transferring onto the substrate. Here we demonstrate that thermal Scanning Probe Lithography (t-SPL) is capable of…
Electron diffraction through a thin patterned silicon membrane can be used to create complex spatial modulations in electron distributions by varying the intensity of different reflections using parameters such as crystallographic…
We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e. relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a…