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Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA)…
Extreme ultraviolet (EUV) lithography is the cornerstone of the fabrication of advanced integrated circuits at the 7-nm node and beyond, but its reliance on multi-element reflective projection optics makes it inaccessible for small-scale…
Extreme Ultraviolet (EUV) lithography is the newest technology that will be used in the semiconductor industry for printing circuitry in the sub-20 nm scale. Low-energy electrons (LEEs) produced upon illumination of resist materials with…
Mask-based pattern generation is a crucial step in microchip production. The next-generation extreme-ultraviolet- (EUV) lithography instruments with a wavelength of \SI{13.5}{\nano\meter} is currently under development. In principle, this…
Extreme ultraviolet (EUV) lithography has revolutionized high-volume manufacturing of nanoscale components, enabling the production of smaller, denser, and more energy efficient integrated circuit devices. Yet, the use of EUV light results…
Microscopy with extreme ultraviolet (EUV) radiation holds promise for high-resolution imaging with excellent material contrast, due to the short wavelength and numerous element-specific absorption edges available in this spectral range. At…
Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution,…
Inorganic molecular materials such as tin oxo cages are a promising generation of photoresists compatible with the demands of the recently developed Extreme UltraViolet (EUV) lithography technology. Therefore, a detailed understanding of…
A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for…
The dissociative photoionization of \textit{tert}-butyl methyl methacrylate, a monomer unit found in many ESCAP resists, was investigated in a gas phase photoelectron photoion coincidence experiment employing extreme ultraviolet (EUV)…
The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons significantly limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel…
Future observatories utilizing reflection grating spectrometers for extreme ultraviolet (EUV) and soft X-ray (SXR) spectroscopy require high-fidelity gratings with both blazed groove facets and custom groove layouts that are often fanned or…
The study presented here was initiated by a discussion to investigate the possibility of using synchrotron radiation as a source for the Next Generation Lithography (NGL) based on the EUV-concept (Extreme Ultra-Violet; here 13.5 nm or 11.3…
Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ~0.5-0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with…
Device architectures and dimensions are now at an unimaginable level not thought possible even 10 years ago. The continued downscaling, following the so-called Moore's law, has motivated the development and use of extreme ultraviolet (EUV)…
Controlled and precise fabrication of structures with heights in the range of single digit nanometres is one of the challenges for diffraction gratings operating near-normal incidence in the extreme ultraviolet (EUV) and soft X-ray range.…
The future success of integrated circuits (IC) technology relies on the continuing miniaturization of the feature size, allowing more components per chip and higher speed. Extreme anisotropy opens new opportunities for spatial pattern…
Ptychographic extreme ultraviolet (EUV) diffractive imaging has emerged as a promising candidate for the next-generation metrology solutions in the semiconductor industry, as it can image wafer samples in reflection geometry at the…
Higher resolution demands for semiconductor lithography may be fulfilled by higher numerical aperture (NA) systems. However, NAs more than the photoresist refractive index (~1.7) cause surface confinement of the image. In this letter we…
Fast production of large area patterns with nanometre resolution is crucial for the established semiconductor industry and for enabling industrial-scale production of next-generation quantum devices. Metastable atom lithography with binary…