Related papers: Efficient and Scalable MIV-transistor with Extende…

Metal inter-layer via (MIV) in Monolithic three-dimensional integrated circuits (M3D-IC) is used to connect inter-layer devices and provide power and clock signals across multiple layers. The size of MIV is comparable to logic gates because…

Monolithic Three-Dimensional Integrated Circuits (M3D-IC) has become an attractive option to increase the transistor density. In M3D-IC, substrate layers are realized on top of previous layers using sequential integration techniques. Recent…

Three Dimensional Integrated Circuits (3D IC) offer lower power consumption, higher performance, higher bandwidth, and scalability over the conventional two dimensional ICs. Through-Silicon Via (TSV) is one of the fabrication mechanisms…

As the demand for high-speed and low-power electronics continues to grow, the quasi-delay-insensitive (QDI) asynchronous domain of digital design has emerged as a promising alternative to traditional clock-based designs. However, the…

Conventional 2D CMOS technology is reaching fundamental scaling limits, and interconnect bottleneck is dominating integrated circuit (IC) power and performance. While 3D IC technologies using Through Silicon Via or Monolithic Inter-layer…

To continue scaling beyond 2-D CMOS with 3-D integration, any new 3-D IC technology has to be comparable or better than 2-D CMOS in terms of scalability, enhanced functionality, density, power, performance, cost, and reliability.…

The semiconductor industry's rapid advancement pushes conventional two-dimensional technology to its utmost limitations in terms of scaling, performance, and cost factors. These challenges drive the usage of 3D technology in the production…

Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V…

3D-Integration is a promising technology towards higher interconnect densities and shorter wiring lengths between multiple chip stacks, thus achieving a very high performance level combined with low power consumption. This technology also…

Over the years, the DRAM latency has not scaled proportionally with its density due to the cost-centric mindset of the DRAM industry. Prior work has shown that this shortcoming can be overcome by reducing the critical length of DRAM access…

In this work, we proposed a new 3D integration technology: the Flip 3D integration (F3D), consisting of the 3D transistor stacking, the 3D dual-sided interconnects, the 3D die-to-die stacking and the dual-sided Monolithic 3D (M3D). Based on…

Storage and transport of six degrees of freedom (6DoF) dynamic volumetric visual content for immersive applications requires efficient compression. ISO/IEC MPEG has recently been working on a standard that aims to efficiently code and…

Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of…

Monolithic 3D (M3D) technology enables high density integration, performance, and energy-efficiency by sequentially stacking tiers on top of each other. M3D-based network-on-chip (NoC) architectures can exploit these benefits by adopting…

Fast combinational multipliers with large bit widths can occupy significant silicon area, which also drives up power consumption. Area can be reduced through resource sharing (i.e., folding) at the expense of lower throughput, which is…

The demand for the three-dimensional (3D) integration of electronic components is on a steady rise. The through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D…

Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…

Heterogeneous manycore architectures are the key to efficiently execute compute- and data-intensive applications. Through silicon via (TSV)-based 3D manycore system is a promising solution in this direction as it enables integration of…

Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconductors offer excellent electrostatic control, their interfaces…

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as…